CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors

F. Alsina; N. Mestres; A. Nakhli; J. Pascual

首页> 外文期刊>Physica status solidi, B. Basic research >CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors

【24h】

CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors

机译：三元III-V化合物半导体中光学声子的CuPt有序指纹

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We present a study of the phonon properties of the CuPt-like ordered GaInP_2 compound within the adiabatic bond charge model. We discuss the folding relations of the acoustic and optical modes and the angular variation of the optical modes. The calculated infrared response is compared with available experimental data. An analogous procedure is done for ordered GaInAs_2 and a prediction for experimental data is made.

机译：我们提出了绝热键电荷模型内的CuPt样有序GaInP_2化合物的声子性质的研究。我们讨论了声模和光学模的折叠关系以及光学模的角度变化。将计算出的红外响应与可用的实验数据进行比较。对有序的GaInAs_2进行了类似的处理，并对实验数据进行了预测。

著录项

来源
《Physica status solidi, B. Basic research》 |1999年第1期|共6页
作者
F. Alsina; N. Mestres; A. Nakhli; J. Pascual;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词

相似文献

外文文献
中文文献
专利

1. CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors [J] . F. Alsina, N. Mestres, A. Nakhli, Physica status solidi, B. Basic research . 1999,第1期

机译：三元III-V化合物半导体中光学声子的CuPt有序指纹
2. X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films - art. no. 155310 [J] . Li JH., Holy V., Zhong Z., Physical Review, B. Condensed Matter . 2001,第15期

机译：CuPt有序的III-V三元半导体合金膜的X射线衍射-艺术。没有。 155310
3. An analysis of phonon emission as controlled by the combined interaction with the acoustic and piezoelectric phonons in a degenerate III-V compound semiconductor using an approximated Fermi-Dirac distribution at low lattice temperatures [J] . Basu A., Das B., Middya T. R., Philosophical magazine: structure and properties of condensed matter . 2018,第7a12期

机译：通过在低格子温度下使用近似的FERMI-DIRAC分布在退化III-V化合物半导体中与声学和压电子组合相互作用控制的声音发射分析
4. Porosity-induced optical phonon engineering in III-V compounds [C] . I.M. Tiginyanu, G. Irmer, J. Monecke, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

机译：III-V化合物的孔隙诱导的光学声子工程
5. Structural and optical properties of II-VI and III-V compound semiconductors. [D] . Huang, Jingyi. 2013

机译：II-VI和III-V化合物半导体的结构和光学性质。
6. Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry [O] . Der-Yuh Lin, Hung-Pin Hsu, Chi-Feng Tsai, 2021

机译：具有完全可调化学计量的分层三元SNS2-XSEx半导体中温度依赖激发能量和增强的电子 - 声子耦合
7. Electrical and optical properties of III-V compound semiconductors at high pressures. [O] . Toshihiko KOBAYASHI 1988

机译：III-V复合半导体的电气和光学性质在高压下。

CuPt Ordering Fingerprints of Optical Phonons in Ternary III-V Compound Semiconductors

摘要

著录项

相似文献

相关主题

期刊订阅