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Location of Current Carrying Faults in Integrated Circuits by Magnetic Force Microscopy

机译:通过磁力显微镜通过集成电路承载故障的位置

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In Integrated Circuits failure analysis excessive power supply current flowing into the IC is often used to indicate the presence of a faulty device. Location of these fault devices can be problematic as the devices are often buried under several layers of conducting interconnect. By imaging the magnetic field produced by current flowing in an IC a faulty device can be located. In this paper we present experimental results on imaging current-carrying faults on integrated circuits using Magnetic force microscopy. We have experimentally determined that MFM is capable of measuring currents as small as 1 to 10 microampere on ICs in a 30 Hz bandwidth. We have carried out modeling calculations comparing the simulation results with experimental results using realistic MFM tip geometry. From these results we have devised a method to accurately locate the position of the internal current carrying faults from MFM images with micrometer uncertainty.
机译:在集成电路故障分析中,流入IC的过大电源电流通常用于指示有故障的装置。这些故障设备的位置可能是有问题的,因为设备通常在若干层导电互连下埋入。通过成像通过在IC中流动的电流产生的磁场可以定位。在本文中,我们使用磁力显微镜对集成电路上的成像电流承载故障提出了实验结果。我们已经通过实验确定了MFM能够在30 Hz带宽中测量小于IC中的1至10微安的电流。我们已经使用实际MFM尖端几何进行了与实验结果的模拟结果进行了建模计算。从这些结果来看,我们设计了一种方法,可以精确地定位来自MFM图像的内部电流携带故障的位置,MFM图像具有千分尺不确定性。

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