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首页> 外文会议>Materials Research Society Symposium >Kelvin Probe Microscopy and Cathodoluminescence Microanalysis of the Irradiation Induced Modification of Insulating Materials
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Kelvin Probe Microscopy and Cathodoluminescence Microanalysis of the Irradiation Induced Modification of Insulating Materials

机译：开尔文探针显微镜和阴极发光微分分析辐照诱导的绝缘材料改性

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摘要

A combination of Kelvin Probe Microscopy (KPM) and Cathodoluminescence (CL) microanalysis has been used to characterize ultra pure silicon dioxide (SiO_2) exposed to electron irradiation in a Scanning Electron Microscope. Charged beam irradiation of poorly conducting materials results in the trapping of charge at pre-existing or irradiation induced defects thereby inducing a localized electric field within the irradiated micro-volume of specimen. The residual surface potentials associated with the localized electric field have been mapped using KPM. Evidence of electro-diffusion and defect micro-segregation in charged beam irradiated SiO_2 is observed. The associated mobile defect species are identified using CL microanalysis techniques. The high correlation between KPM and CL images confirms the significant influence of localized potentials on the microstructure of technologically important SiO_2.
机译：Kelvin探针显微镜（KPM）和阴极致发光（CL）微基分析的组合已经用于将暴露于扫描电子显微镜中的电子照射的超纯二氧化硅（SiO_2）表征。导电材料的带电射线照射导致预先存在或照射诱导的缺陷处的电荷诱导，从而诱导辐照的微量体积的局部电场。与局部电场相关联的剩余表面电位已使用KPM映射。观察到在带电射线照射SiO_2中电扩散和缺陷微偏析的证据。使用CL微内分析技术识别相关的移动缺陷物种。 KPM和CL图像之间的高相关证实了局部潜力对技术重要性SiO_2的微观结构的显着影响。

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