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首页> 外文期刊>Microscopy and microanalysis: The official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada >Kelvin probe microscopy of localized electric potentials induced in insulating materials by electron irradiation
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Kelvin probe microscopy of localized electric potentials induced in insulating materials by electron irradiation

机译：开尔文探针显微镜通过电子辐照在绝缘材料中感应的局部电位

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摘要

Kelvin probe microscopy (KPM) is a specialized atomic force microscopy technique in which long-range Coulomb forces between a conductive atomic force probe and a specimen enable the electrical potential at the surface of a specimen to be characterized with high spatial resolution. KPM has been used to characterize nonconductive materials following their exposure to stationary electron beam irradiation in a scanning electron microscope (SEM). Charged beam irradiation of poorly conducting materials results in the trapping of charge at either preexisting or irradiation-induced defects. The reproducible characteristic surface potentials associated with the trapped charge have been mapped using KPM. Potential profiles are calculated and compared with observed potential profiles giving insight into the charging processes and residual trapped charge distributions.
机译：开尔文探针显微镜（KPM）是一种特殊的原子力显微镜技术，在该技术中，导电原子力探针和样品之间的远距离库仑力使样品表面的电势具有较高的空间分辨率。在扫描电子显微镜（SEM）中将非导电材料暴露于固定电子束辐照后，已使用KPM对其进行表征。导电性差的材料的带电束辐照会导致将电荷捕获在预先存在的缺陷或辐照引起的缺陷处。与捕获的电荷相关的可重现的特征表面电势已使用KPM进行了映射。计算电位分布并将其与观察到的电位分布进行比较，从而洞悉充电过程和残留的电荷分布。

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