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Study of interface formation of (Ba,Sr)TiO_3 thin films grown by rf sputter deposition on bare Si and thermal SiO_2/Si substrates

机译:RF溅射沉积在裸SI和热SiO_2 / Si基板上产生(BA,SR)TiO_3薄膜界面形成的研究

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(Ba,Sr)TiO_3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si.Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO_2 layer thickness for bare substrates and those with a 1 nm initial oxide layer,and a decrease for thicker (3.5 nm) initial SiO_2 films.This result was confirmed by high resolution electron microscopy (HREM) analysis of the films,and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO_2.From high-frequency capacitance-voltage (C-V) analysis,a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.
机译:(BA,SR)TiO_3(BST)通过离子束溅射沉积薄膜,在裸露和氧化的Si中沉积。光谱椭圆形测定法(SE)模型结果显示出SiO_2层厚度的裸基板的厚度和1nm初始的那些。氧化物层和较厚(3.5nm)初始SiO_2薄膜的减少。通过膜的高分辨率电子显微镜(HREM)分析来证实该结果,据信是由于同时皮下氧化Si和反应使用SiO_2的BST层。从高频电容 - 电压(CV)分析,观察到氧化Si衬底的界面捕集密度点的降低。

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