Characterisation of Nanocrystals by Scanning Capacitance Force Microscopy

机译：扫描电容力显微镜通过扫描纳米晶体的表征

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Scanning capacitance force microscopy is used to localise Sn nanometer sized structures embedded in a silicon oxide thin film. The capacitance variation occurring between probe and sample in presence of a metallic cluster modifies the oscillation amplitude of the AFM probe at twice the frequency of the applied voltage. The extreme localisation of the interaction due to the small geometries involved allows a lateral resolution of few nm. Issues related to the contrast mechanism are discussed with the support 2D finite element calculation of the electric field distribution between probe and sample.

机译：扫描电容力显微镜用于将嵌入氧化硅薄膜中的Sn纳米尺寸结构定位。在金属簇存在下探头和样品之间发生的电容变化在施加电压的频率的两倍下改变AFM探针的振幅幅度。由于所涉及的小几何形状引起的相互作用的极端定位允许横向分辨率为几个nm。与对比机制相关的问题与探测和样本之间的电场分布的支持2D有限元计算讨论。

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《Materials Research Society Symposium》|2003年||共6页
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Grazia Tallarida; Sabina Spiga; Marco Fanciulli;
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中图分类工程材料学;
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Characterisation of Nanocrystals by Scanning Capacitance Force Microscopy

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