Prospective Technology for System-on-a-Chip: N_2 implant followed by VHP O_2 re-oxidation

机译：芯片系统的前瞻性技术：N_2植入物，其次是VHP O_2重新氧化

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A novel technique -N_2 ion implant (N_2 I/I) followed by vertical high pressure (VHP) O_2 re-oxidation in a furnace, capable of growing oxides of multiple thickness is presented. It is observed that the oxidation rate can be well modulated by varying the N_2 I/I dose, and VHP O_2 re-oxidation provides enhanced oxide growth rate and controls the ntrogen profile in the film, as compared to RTO or furnace O_2 re-oxidation. Therefore, more than 500

机译：一种新的技术-N_2离子植入物（N_2 I / I），然后呈现在炉中的垂直高压（VHP）O_2再氧化，能够产生多层厚度的氧化物。观察到氧化率可以通过改变N_2 I / I剂量进行良好调节，并且VHP O_2再氧化提供增强的氧化物生长速率并与RTO或炉子O_2重新氧化相比，对膜中的烟叶分布进行控制。因此，超过500

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《Conference on challenges in process integration and device technology》|2000年||共10页
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T.Y.Luo; H.n.Al-Shareef; G.A.Brown; V.H.C.Watt; A.Karamcheti; M.D.Jackson; H.R.Huff; B.Evans; C.H.Lee; H.F.Luan; D.L.Kwong; SPIE-The International Society for Optical Engineering;
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正文语种
中图分类半导体技术;
关键词
System-on-a-Chip(SOC); N_2 ion implant (N_2 I/I); vertical high pressure (VHP) re-oxidation;

机译：系统上芯片（SOC）;N_2离子植入物（N_2 I / I）;垂直高压（VHP）重新氧化;

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2. Dielectric barrier discharge plasma treatment on E. coli: Influence of CH_4/N_2, O_2, N_2/O_2, N_2, and Ar gases [J] . Abhijit Majumdar, Rajesh Kumar Singh, Gottfried J. Palm, Journal of Applied Physics . 2009,第8期

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4. Prospective Technology for System-on-a-Chip: N_2 implant followed by VHP O_2 re-oxidation [C] . T.Y.Luo, H.n.Al-Shareef, G.A.Brown, Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA . 2000

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Prospective Technology for System-on-a-Chip: N_2 implant followed by VHP O_2 re-oxidation

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