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Interfacial Layer Effects in Ba_(1-x)Sr_xTiO_3 Thick Films prepared by Plasma Spray

机译:BA_(1-x)SR_XTIO_3厚膜中的界面层效应通过等离子体喷雾制备

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The dielectric properties of high k dielectric thick films prepared by thermal spray were investigated. BaTiO_3 and Ba_(0.68)Sr_(0.32)TiO_3 thick films were deposited using plasma spray on Ag·Pd screen-printed alumina substrates. The sprayed films were predominantly polycrystalline but contained an amorphous second phase. The dielectric constants of the films decreased with decreasing film thickness in 10 ~ 60 μm range. This was attributed to the presence of an interfacial layer between the film and the substrate as determined by capacitance measurements. The capacitance density of the interfacial layer was determined to be ~ 2.7 nF/cm~2. The capacitance density of the interfacial layer increased to 12 nF/cm~2 after post heat treatment at 500 °C for 20 hours.
机译:研究了通过热喷涂制备的高k介电厚膜的介电性能。使用等离子体喷涂在Ag·Pd丝网印刷的氧化铝基材上沉积Batio_3和Ba_(0.68)Sr_(0.68)Sr_(0.32)TiO_3厚膜。喷涂的薄膜主要是多晶,但含有非晶第二阶段。薄膜的介电常数随着膜厚度的减小而在10〜60μm范围内降低。这归因于通过电容测量确定的膜和基板之间的界面层的存在。确定界面层的电容密度为〜2.7nf / cm〜2。在500℃下热处理20小时后,界面层的电容密度增加到12nF / cm〜2。

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