Capacitance Modeling of Short-Channel DG and GAA MOSFETs

机译：短通道DG和GAA MOSFET的电容建模

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Modeling of the intiinsic capacitances of short-channel, nanoscale DG and GAA MOSFETs is presented, covering a wide range of operation from subthreshold to strong inversion. In subthreshold, the electrostatics is dominated by the inter-electrode capacitive coupling, from which analytical expressions for the charge conserving trans- and self-capacitances of the DG device can readily be derived. Near and above threshold, the influence of the electronic charge is taken into account in a precise, self-consistent manner by combining suitable model expressions with Poisson's equation in the device body. The models are verified by comparison with numerical device simulations.

机译：提出了短通道，纳米级DG和GAA MOSFET的环境模拟，覆盖了从亚阈值到强反转的各种操作。在亚阈值中，静电学由电极间电容耦合支配，可以容易地推导出用于电荷节省的电荷节能和自电容的分析表达式。近乎且高于阈值，通过将合适的模型表达与装置体中的泊松等式组合，以精确的自我支撑的方式考虑电子电荷的影响。通过与数值设备模拟进行比较验证模型。

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《NSTI BioNano Conference and Trade Show》|2008年||共5页
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H. BOTH; S. Kolberg; T.A Fjeldly;
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中图分类 TB383-532;
关键词
short-channel MOSFET; double-gate; gate-all-around; nanoscale; capacitances; conformal mapping;

机译：短通道MOSFET;双门;全部门;纳米级;电容;保形映射;

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1. Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs [J] . Yashu Swami, Sanjeev Rai 电路与系统（英文） . 2021,第004期
2. Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region [J] . Thomas Holtij, Mike Schwarz, Alexander Kloes, Solid-State Electronics . 2013,第deca期

机译：亚阈值区域内短通道无结DG MOSFET内的阈值电压和2D电位建模
3. On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile [J] . Dubey S., Tiwari P.K., Jit S. Journal of Semiconductors . 2013,第5期

机译：具有垂直高斯型掺杂分布的短沟道双栅（DG）MOSFET的电流模型
4. Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs [J] . Pramod Kumar Tiwari, Sarvesh Dubey, Kunal Singh, Superlattices and microstructures . 2012,第5期

机译：短沟道三材料双栅极（TM-DG）MOSFET的亚阈值电流和亚阈值摆幅的分析模型
5. Capacitance Modeling of Short-Channel DG and GAA MOSFETs [C] . H. BOTH, S. Kolberg, T.A Fjeldly NSTI BioNano Conference and Trade Show . 2008

机译：短通道DG和GAA MOSFET的电容建模
6. Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs [D] . Ren, Zhongjie. 2020

机译：DG MOSFET接近阈值IV特性的非GCA建模
7. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
8. A doping dependent threshold voltage model of uniformly doped short-channel symmetric double-gate (DG) MOSFET’s [O] . Tiwari P.K., Dubey S., Jit S. 2011

机译：均匀掺杂的短沟道对称双栅（DG）MOSFET的掺杂相关阈值电压模型

Capacitance Modeling of Short-Channel DG and GAA MOSFETs

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