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首页> 外文会议> >THE EFFECT OF THE NUCLEATION LAYER ON THE LOW TEMPERATURE GROWTH OF GaN USING A REMOTE PLASMA ENHANCED - ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (RPE-UHVCVD)
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THE EFFECT OF THE NUCLEATION LAYER ON THE LOW TEMPERATURE GROWTH OF GaN USING A REMOTE PLASMA ENHANCED - ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (RPE-UHVCVD)

机译：远程等离子体增强的超高真空化学气相沉积法（RPE-UHVCVD）形核层对GaN低温生长的影响

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摘要

This study investigated the low temperature growth of GaN on a nucleation layer in a remote plasma enhanced-ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) system which is equipped with an rf plasma cell for a nitrogen source. It was found that the growth temperature and the film thickness of the nucleation layer and the nitrogen flow rate for GaN growth play important roles in the improvement of crystallinity of the GaN layer. The nitridation of sapphire was also found to enhance the formation of facet shaped nuclei on the nucleation layer. As the temperature of the nucleation layer increased, islands with hexagonal and other facet shapes were formed on the grown GaN surface. This facet formation was related with the surface morphology and crystallinity of GaN. The best crystallinity was measured in a GaN layer with hexagonal facets on the surface and such GaN layers could be grown on a nucleation layer grown at 375 ℃. Nitridation of sapphire and the growth temperature of the nucleation layer were also found to change the island shapes which enhances the formation of columnar structures in the GaN layer, resulting in the growth of a high crystalline GaN layer at low temperature.
机译：这项研究调查了远程等离子体增强超高真空化学气相沉积（RPE-UHVCVD）系统中成核层上GaN的低温生长，该系统配备了用于氮源的RF等离子体电池。已经发现，用于GaN生长的生长温度，成核层的膜厚度和氮气流速在改善GaN层的结晶度中起重要作用。还发现蓝宝石的氮化可增强成核层上刻面形核的形成。随着成核层温度的升高，在生长的GaN表面上会形成具有六边形和其他小平面形状的岛。该小面的形成与GaN的表面形态和结晶度有关。在表面具有六边形小面的GaN层中测得最佳结晶度，并且此类GaN层可以在375℃下生长的成核层上生长。还发现蓝宝石的氮化和成核层的生长温度改变了岛形，这增强了GaN层中柱状结构的形成，从而导致了低温下高结晶GaN层的生长。

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  • 来源
    《》|1997年|75-80|共6页
  • 会议地点 Boston MA(US)
  • 作者

    KYOUNG-KOOK KIM; DONG-JUN KIM; JONG-SIK PAEK; JE-HEE JO; HYO-GUN KIM; TAE-YEON SEONG; SEONG-JU PARK;

  • 作者单位

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea;

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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