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首页> 外文会议> >EFFECT OF ATOMIC-HYDROGEN TREATMENT OF (001) GaAs SUBSTRATE AT 'HIGH TEMPERATURES' ON RF PLASMA-ASSISTED MOLECULAR BEAM EPITAXY OF CUBIC GaN
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EFFECT OF ATOMIC-HYDROGEN TREATMENT OF (001) GaAs SUBSTRATE AT 'HIGH TEMPERATURES' ON RF PLASMA-ASSISTED MOLECULAR BEAM EPITAXY OF CUBIC GaN

机译：（001）GaAs基质在'高温'的原子-氢处理对RF等离子体辅助立方氮化镓分子束表观的影响

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摘要

Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70 -90 arcsec.
机译：通过射频等离子体辅助MBE检验了经过原子H处理的（001）GaAs上高质量c-GaN的生长。首先，通过RHEED和AFM观察研究了初始生长阶段（GaAs的原子H处理，氮化镓缓冲层的氮化/沉积，缓冲层的沉积后退火以及c-GaN的外延）。发现在高温下通过原子-H处理可以获得具有一个单层高度台阶和参差不齐的台阶边缘的原子平坦的GaAs表面。发现用原子氢处理的GaAs表面对于生长高质量的c-GaN是优选的； （002）c-GaN的X射线摇摆曲线的FWHM小到70 -90 arcsec。

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  • 来源
    《》|1997年|227-232|共6页
  • 会议地点 Boston MA(US)
  • 作者

    A. YOSHIKAWA; H. NAGANO; Z.X. QIN; Y. SUGURE; A.W. JIA; M. KOBAYASHI; M. SHIMOTOMAI; Y. KATO; K. TAKAHASHI;

  • 作者单位

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

    Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan;

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  • 正文语种 eng
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