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Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

机译:MOCVD沉积氧化f薄膜的生长,物理性能及其在硅上的性能

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This paper discusses metal organic chemical vapor deposited (MOCVD) HfO_2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition temperature on the growth kinetics and physical properties of the HfO_2 layers. Important characteristics such as crystalline state, density, and organic contamination in the layers were found to be dependent on these parameters. Typical for this deposition process is the formation of an interfacial layer underneath the high-k layer. Its composition and thickness, affecting scaling of the equivalent oxide thickness, are shown to be closely related to the HfO_2 process parameters mentioned above. Finally, we will show electrical results for HfO_2/polySi gate stacks indicating the effect for deposition temperature.
机译:本文讨论了以四(二乙基氨基)ha(TDEAH)为前体的金属有机化学气相沉积(MOCVD)HfO_2层。我们已经研究了起始表面和沉积温度对HfO_2层的生长动力学和物理性质的影响。发现层中的重要特征,例如晶态,密度和有机污染取决于这些参数。对于该沉积过程而言,典型的是在高k层下方形成界面层。它的成分和厚度影响等效氧化物厚度的缩放比例,显示与上述HfO_2工艺参数密切相关。最后,我们将显示HfO_2 /多晶硅栅堆叠的电学结果,表明对沉积温度的影响。

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