Electronic phase transitions in transparent zinc oxide thin films

机译：透明氧化锌薄膜中的电子相变

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The peculiarities of charge carrier transfer mechanism in ZnO films doped by donor or acceptor impurity and metal-dielectric electronic phase transition were investigated. The control parameter of this transition is concentration of interstitial Zn atoms. The films with high concentration of interstitial Zn atoms have high conductivity of metallic type. Air annealing leads to change of conductivity temperature dependence from metallic type to dielectric one.

机译：研究了供体或受体杂质掺杂的ZnO膜中的电荷载体转移机制的特性和金属电介质电子相转变。该转变的控制参数是间质Zn原子的浓度。具有高浓度间质Zn原子的薄膜具有高导电性的金属型。空气退火导致导电性温度从金属型变为电介质。

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《SPIE Conference on Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications》|2013年||共7页
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A. R. Poghosyan; N. R. Aghamalyan; R. Guo; Y. A. Kafadaryan; R. K. Hovsepyan; S. I. Petrosyan;
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中图分类 621.381/045;
关键词
Zinc oxide thin films; transparent oxides; electronic phase transition;

机译：氧化锌薄膜;透明氧化物;电子阶段过渡;

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1. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films [J] . Oh Seol Hee, Ferblantier Gerald, Park Young Sang, Applied Surface Science . 2018,第MAY31期

机译：双极性掺Yb的氧化锌锡透明薄膜的低温生长和电子结构
2. MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: Precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes [J] . Ni J, Yan H, Wang AC, Journal of the American Chemical Society . 2005,第15期

机译：MOCVD衍生的高透明，导电的锌和锡掺杂的氧化铟薄膜：前驱体合成，亚稳相膜的生长和表征，以及在聚合物发光二极管中用作阳极
3. Sol-gel synthesis of intrinsic and aluminum-doped zinc oxide thin films as transparent conducting oxides for thin film solar cells [J] . Shahzad Salam, Mohammad Islam, Aftab Akram Thin Solid Films . 2013,第FEBa1期

机译：溶胶-凝胶法合成本征和掺杂铝的氧化锌薄膜，作为薄膜太阳能电池的透明导电氧化物
4. Electronic phase transitions in transparent zinc oxide thin films [C] . A. R. Poghosyan, N. R. Aghamalyan, R. Guo, Photonic fiber and crystal devices: advances in materials and innovations in device applications VII . 2013

机译：透明氧化锌薄膜中的电子相变
5. Improved transparent conducting oxides through modulation-doped zinc oxide/zinc magnesium oxide thin films. [D] . Cohen, David J. 2008

机译：通过调制掺杂的氧化锌/氧化锌镁薄膜改善了透明导电氧化物。
6. Direct synthesis and characterization of optically transparent conformal zinc oxide nanocrystalline thin films by rapid thermal plasma CVD [O] . Joachim D Pedersen, Heather J Esposito, Kwok Siong Teh 2011

机译：快速热等离子体CVD直接合成并表征光学透明的保形氧化锌纳米晶薄膜
7. Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties? [O] . Nobuhiro Nakamura, Junghwan Kim, Hideo Hosono 2017

机译：用于有机电子透明氧化物半导体的材料设计：为什么硅酸盐薄膜具有卓越的性质？
8. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint). [R] . Grant, J., Murphy, N. R., Jones, J., 2016

机译：反应共溅射制备高透明导电铝掺杂氧化锌薄膜（后印刷）。

Electronic phase transitions in transparent zinc oxide thin films

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