2D simulations of non-local transport effects in deep-submicrometer HEMTs

机译：2D模拟深层底尺寸的非局部运输效果

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In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT's, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

机译：在本文中，介绍了传统的漂移扩散模型，并且当器件尺寸缩小到深层逐渐计量方案时，分析了缺点，预期非局部效应将变得更加突出。为了调查Inalas / Ingaas HEMT的非本地运输效果，考虑了能量平衡模型。分析了电子动量和能量松弛时间的非等价性引起的速度过冲，并负责漏极电流和跨导的增加。

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《International Workshop on Microwave and Millimeter Wave Circuits and System Technology》|2013年||共3页
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Zhiming Wang; Xiaobin Luo; Weihua Yu; Xin Lv;
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正文语种
中图分类电路理论;
关键词
HEMTs; Non-local transport effects; Velocity overshoot; energy relaxation times; simulation;

机译：HEMTS;非局部运输效果;速度过冲;能量松弛时间;模拟;

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2D simulations of non-local transport effects in deep-submicrometer HEMTs

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