2D simulations of non-local transport effects in deep-submicrometer HEMTs

机译：深亚微米HEMT中非局部传输效应的2D模拟

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In this paper, conventional drift-diffusion model was introduced and the disadvantage was analysed when the device dimensions shrink to deep-submicrometer regime, non-local effects are expected to become more prominent. To investigate non-local transport effects in InAlAs/InGaAs HEMT's, energy-balance model was taken into account. Velocity overshoot caused by non-equivalence of electron momentum and energy relaxation times was analysed and is responsible for the increasing drain current and transconductance.

机译：本文介绍了传统的漂移扩散模型，并分析了当器件尺寸缩小到深亚微米范围时的缺点，预计非局部效应会更加突出。为了研究InAlAs / InGaAs HEMT中的非局部传输效应，考虑了能量平衡模型。分析了由电子动量和能量弛豫时间不相等引起的速度过冲，这是造成漏极电流和跨导增加的原因。

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来源
《2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology》|2013年|468-470|共3页
会议地点 Emeishan(CN)
作者
Zhiming Wang; Xiaobin Luo; Weihua Yu; Xin Lv;
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作者单位

School of Information and Electronics, Beijing Institute of Technology, 100081, Chinac;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
HEMTs; Non-local transport effects; Velocity overshoot; energy relaxation times; simulation;

机译：HEMTs;非局部传输效应;速度超调;能量弛豫时间;模拟;;

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2D simulations of non-local transport effects in deep-submicrometer HEMTs

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