A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift

机译：具有低插入相移的毫米波6位GaAs单片数字衰减器

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A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift is presented. This attenuator is fabricated with E.D process, the six main attenuation bits are 0.5, 1, 2, 4, 8, 16dB. From the measurement results of this MMIC chip in the 19–23GHz band show that the 6-bit GaAs monolithic digital attenuator has 0.5dB resolution and 35.5dB dynamic attenuation range, return loss are less than −11dB for all attenuation states, and attenuation accuracy: +1.31dB/−0.13dB, insertion phase shift: +3∘ /−5∘; referenced insertion loss < −2.88dB; the chip size is 3.0mm×2.0mm×0.1mm; the control voltage is 0V–5V.

机译：提出了具有低插入相移的毫米波6位GaAs单片数字衰减器。该衰减器采用E.D工艺制造，六个主要衰减位为0.5,1,2,4,8,16dB。从19-23GHz乐队中这个MMIC芯片的测量结果表明，6位GaAs单片数字衰减器具有0.5dB分辨率和35.5dB动态衰减范围，所有衰减状态的返回损耗小于-11dB，以及衰减精度：+ 1.31db / -0.13db，插入阶段偏移：+ 3∘/-5∘;引用插入损耗<-2.88dB;芯片尺寸为3.0mm×2.0mm×0.1mm;控制电压为0V-5V。

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《International Workshop on Microwave and Millimeter Wave Circuits and System Technology》|2013年||共4页
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Na Chen;
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中图分类电路理论;
关键词
GaAs Monolithic; MMIC; Millimeter-wave; digital attenuator; low insertion phase shift;

机译：GaAs单片;MMIC;毫米波;数字衰减器;低插入阶段换档;

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1. A millimeter-wave 6-bit digital attenuator with high accuracy and low insertion loss [J] . Bo Zhang, Jing Zhao IEICE Electronics Express . 2016,第17期

机译：具有高精度和低插入损耗的毫米波6位数字衰减器
2. Monolithic GaAs phase shifter circuit with low insertion loss and continuous 0-360/spl deg/ phase shift at 20 GHz [J] . Nagra A.S., Jian Xu IEEE Microwave and Guided Wave Letters . 1999,第1期

机译：具有低插入损耗和20 GHz连续0-360 / spl deg /相移的单片GaAs移相器电路
3. 6-bit CMOS Digital Attenuators With Low Phase Variations for -Band Phased-Array Systems [J] . Ku B.-H., Hong S. Microwave Theory and Techniques, IEEE Transactions on . 2010,第7期

机译：带相移阵列系统的具有低相位变化的6位CMOS数字衰减器
4. A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift [C] . Na Chen 2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology . 2013

机译：具有低插入相移的毫米波6位GaAs单片数字衰减器
5. Development of monolithic silicon-germanium and packages RF MEMS high-linearity five-bit high-low pass phase shifters for SOC X-band T/R modules. [D] . Morton, Matthew A. 2007

机译：开发单片硅锗，并封装用于SOC X波段T / R模块的RF MEMS高线性度五位高低通移相器。
6. RF-MEMS Monolithic K and Ka Band Multi-State Phase Shifters as Building Blocks for 5G and Internet of Things (IoT) Applications [O] . Jacopo Iannacci, Giuseppe Resta, Alvise Bagolini, 2020

机译：RF-MEMS单片K和Ka频段多状态移相器是5G和物联网（IoT）应用的基础
7. A millimeter-wave 6-bit digital attenuator with high accuracy and low insertion loss [O] . Bo Zhang, Jing Zhao 2016

机译：具有高精度和低插入损耗的毫米波6位数字衰减器

A millimeter-wave 6-bit GaAs monolithic digital attenuator with low insertion phase shift

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