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Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

机译：电子和质子辐射下碳化硅缺陷形成的比较分析

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The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of "low" energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

机译：进行0.9meV电子和8meV和15meV质子的照射用于研究辐射缺陷。在数值上模拟了碳化硅膜中的质子散射。获得赋予反冲原子的能量的分布直方图。在分析直方图时考虑两个能量范围。在“低”能量的第一范围内，创建具有紧密间隔组件的单个Frenkel对。在第二范围内，反冲原子具有足以产生级联的位移的能量。这使得具有高密度空位和各种空位复合物的微观区域。

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《ECSCRM 2012》|2013年||共4页
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作者
A.M. Ivanov; A.A. Lebedev; V.V. Kozlovski;
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原文格式 PDF
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中图分类 73.722083;
关键词
Radiation Defects; Scattering Events; Vacancy-generating Collisions; Energy Distribution of Recoil Atoms;

机译：辐射缺陷;散射事件;空置产生的碰撞;反冲原子的能量分布;

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1. Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation [J] . A.M. lvanov, A.A. Lebedev, V.V. Kozlovski Materials science forum . 2013,第期

机译：电子和质子辐照下碳化硅中缺陷形成的比较分析
2. Comparative Results of Low Temperature Annealing of Lightly Doped n-Layers of Silicon Carbide Irradiated by Protons and Electrons [J] . Vitali V. Kozlovski, Oleg Korolkov, Alexander A. Lebedev, Materials science forum . 2020,第期

机译：质子和电子照射碳化硅轻掺杂N层低温退火的对比结果
3. Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type [J] . Emtsev V.V., Ivanov A.M., Kozlovski V.V., Semiconductors . 2012,第4期

机译：快速电子和质子辐照产生缺陷的异同：中度掺杂的n型硅和碳化硅
4. Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation [C] . A.M. Ivanov, A.A. Lebedev, V.V. Kozlovski ECSCRM 2012 . 2013

机译：电子和质子辐射下碳化硅缺陷形成的比较分析
5. Silicon carbide nanowires: Elastic properties, defects, and surface formations. [D] . Rich, Ryan Michael. 2011

机译：碳化硅纳米线：弹性，缺陷和表面形成。
6. Atomic Configuration of Point Defect Clusters in Ion-Irradiated Silicon Carbide [O] . Y. R. Lin, L. G. Chen, C. Y. Hsieh, -1

机译：离子辐照碳化硅中点缺陷簇的原子构型
7. Clarification of Mechanism on Radiation-induced Defect Formations of Chemical Vapor Deposited Silicon Carbides by Hydrogen Isotope Ion Irradiations [O] . B. Tsuchiya, M. Ozawa, S. Bandow, 100

机译：氢同位素离子辐照对化学气相沉积碳化硅辐射诱导缺陷形成机理的澄清

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

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