Ferroelectric HfO_2 films have attracted lots of attention because they can be applied to various devices, including memories and logics, with reduced power consumption. Some of the issues of ferroelectric HfO_2 films are the wake-up effect and the thickness scaling to the ferroelectricity. The wake-up effect is the increase in the remnant polarization (P_r) during the cycling test, and the physical explanation in the film has been reported so far. Also, the crystal structure change after the cycling test has been detected. The thickness scaling includes both roll-up and off of the P_r on the film thickness. The physical phenomena are still not known, and the combination of the wake-up effect and the thickness scaling may give a clue to understanding the physics. In this study, we investigated the thickness-dependent wake-up effect of Y-doped atomic-layer-deposited (ALD) HfO_2 films.
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