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首页> 外文会议>Pacific Rim Meeting on Electrochemical and Solid-State Science >(Invited) Theoretical Understanding of Nanoscale Ferroelectric Field-Effect-Transistor Having a Poly-Domain Structure
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(Invited) Theoretical Understanding of Nanoscale Ferroelectric Field-Effect-Transistor Having a Poly-Domain Structure

机译：（邀请）具有多域结构的纳米级铁电场 - 效应晶体管的理论认识

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摘要

The emergence of ferroelectricity in doped HfO_2 and (Hf,Zr)O_2 (HZO) thin film with a typical thickness ～10 nm brings back the great interest in ferroelectric (FE) memories including the conventional ferroelectric random access memory, ferroelectric field-effect transistors (FEFET), and more recent negative capacitance field-effect transistors, in not only academia but also memory industry. In the industry, one of the most important issues concerning a FEFET is whether FEFET based NAND (FE-NAND) memory can be a next-generation device with superior performance to a conventional CTF-based NAND memory. For this purpose, it must have the multi-level capability and lower interference between adjacent memory cells. Because of sufficiently large ferroelectric polarization (10～15 uC/cm~2 for typical HZO thin film), the multi-level capacity of FE-NAND would be higher than that of CTF-based NAND. However, an experimental result of FE-NAND devices shows that only a tenth of the expected memory window for the reading operation was achieved. At the same time, ten times larger erasing/writing voltages are required.
机译：掺杂HFO_2和（HF，Zr）O_2（HZO）薄膜的铁电性的出现典型厚度〜10nm的薄膜带回了在包括传统铁电动随机存取存储器，铁电场效应晶体管的铁电（Fe）存储器中的巨大兴趣（FEFET），更近期的负电容场效应晶体管，不仅是学术界，而且是内存行业。在行业中，关于FEFET的最重要问题之一是FEFET基NAND（FE-NAND）存储器可以是具有卓越的基于CTF的NAND内存性能的下一代设备。为此目的，它必须具有多级能力和较低的相邻存储器单元之间的干扰。由于铁电偏振量足够大（典型HZO薄膜10〜15uc / cm〜2），FE-NAND的多级容量将高于基于CTF的NAND。然而，Fe-NAND器件的实验结果表明，仅实现了用于读取操作的预期存储器窗口的第十。同时，需要大量擦除/写入电压的十倍。

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