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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >Probabilistic Calibration of a Simple Resist Model for Simulation-Based Scoring of Mask Defects
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Probabilistic Calibration of a Simple Resist Model for Simulation-Based Scoring of Mask Defects

机译：基于模拟的掩模缺陷的仿真评分的简单抗蚀剂模型的概率校准

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摘要

Simulation-based scoring of mask defects is useful for technology nodes of 180 nm and below since wafer shapes can be quite different from those on the mask, and therefore not every defect has printing significance. An important issue for simulation-based scoring is calibrating the resist model. Calibration data is scarce for a variety of reasons, among them, (ⅰ) the mask shop is not privy to it, and (ⅱ) the reticle-inspection machine may not visit calibration locations. Specifically, while is relatively easy to obtain the target critical dimension (CD) - the intended value of the smallest wafer CD for that mask, the cutline position for that target CD is uncertain. This work focuses on calibrating the simplest of resist models, a threshold, using only knowledge of the target CD. It quantifies the uncertainty in target cutline position with a probabilistic treatment. This shifts the question from, "What is a good threshold?" to, "What is NOT a bad threshold?" The answer is a range of thresholds that does not print sub-resolution features, and that does not grossly distort the ratio of inspection-image CD to wafer CD. Defect dispositioning is then based on the most pessimistic printability score for that threshold range. Given the uncertainty in resist-model calibration, it is appropriate to be conservative and assume the most pessimistic resist threshold.
机译：基于模拟的掩模缺陷的评分对于180nm的技术节点和下方是有用的，因为晶片形状可以与掩模上的晶片形状完全不同，因此并非每个缺陷都具有印刷意义。基于模拟的评分的一个重要问题正在校准抗蚀剂模型。由于各种原因，校准数据是稀缺的，其中：（Ⅰ）面罩商店对其无力，（Ⅱ）掩模版检查机可能无法访问校准位置。具体而言，虽然相对容易获得目标临界尺寸（CD） - 用于该掩模的最小晶片CD的预期值，该掩模的切割位置是不确定的。这项工作侧重于校准最简单的抗蚀剂模型，仅使用目标CD的知识来校准阈值。它量化了概率治疗目标切割位置的不确定性。这改变了问题，“什么是好的门槛？” “什么不是糟糕的门槛？”答案是不打印子分辨率功能的一系列阈值，并且不会将检查图像CD与晶片CD的比率严重扭曲。然后基于该阈值范围的最悲观的可打印性分数来缺陷分散。鉴于抗蚀剂模型校准的不确定性，是保守的并且假设最悲观的抗蚀阈值是合适的。

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