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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Probabilistic Calibration of a Simple Resist Model for Simulation-Based Scoring of Mask Defects
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Probabilistic Calibration of a Simple Resist Model for Simulation-Based Scoring of Mask Defects

机译：基于模拟的掩膜缺陷评分的简单抵抗模型的概率校准

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摘要

Simulation-based scoring of mask defects is useful for technology nodes of 180 nm and below since wafer shapes can be quite different from those on the mask, and therefore not every defect has printing significance. An important issue for simulation-based scoring is calibrating the resist model. Calibration data is scarce for a variety of reasons, among them, (ⅰ) the mask shop is not privy to it, and (ⅱ) the reticle-inspection machine may not visit calibration locations. Specifically, while is relatively easy to obtain the target critical dimension (CD) - the intended value of the smallest wafer CD for that mask, the cutline position for that target CD is uncertain. This work focuses on calibrating the simplest of resist models, a threshold, using only knowledge of the target CD. It quantifies the uncertainty in target cutline position with a probabilistic treatment. This shifts the question from, "What is a good threshold?" to, "What is NOT a bad threshold?" The answer is a range of thresholds that does not print sub-resolution features, and that does not grossly distort the ratio of inspection-image CD to wafer CD. Defect dispositioning is then based on the most pessimistic printability score for that threshold range. Given the uncertainty in resist-model calibration, it is appropriate to be conservative and assume the most pessimistic resist threshold.
机译：基于掩模的缺陷的基于模拟的评分对于180 nm及以下的技术节点很有用，因为晶圆形状可能与掩模上的形状完全不同，因此并非每个缺陷都具有印刷意义。基于模拟的评分的一个重要问题是校准抗蚀剂模型。由于多种原因，校准数据稀缺，其中包括：（ⅰ）口罩车间不熟悉它，并且（ⅱ）掩模版检查机可能无法访问校准位置。具体地，尽管相对容易获得目标临界尺寸（CD）-该掩模的最小晶片CD的预期值，但是该目标CD的切割线位置是不确定的。这项工作专注于仅使用目标CD的知识来校准最简单的抗蚀剂模型（阈值）。它通过概率处理量化了目标割据位置的不确定性。这使问题从“什么是好的门槛？”转变了。到“什么是不错的门槛？”答案是一系列阈值，这些阈值不会打印出亚分辨率特征，并且不会严重扭曲检查图像CD与晶圆CD的比率。然后，基于该阈值范围的最悲观可印刷性得分来确定缺陷的位置。给定抗蚀剂模型校准的不确定性，保守一点并假设最悲观的抗蚀剂阈值是适当的。

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