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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >Faster Root Cause Analysis With Integrated SEM-FIB Application
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Faster Root Cause Analysis With Integrated SEM-FIB Application

机译：使用集成的SEM-FIB应用更快的根本原因分析

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Integration of FIB (focused ion beam) into an automatic defect review SEM provide new dimension to defect root cause analysis. It brings out defect cross-section application from failure analysis lab to the clean room process, providing sub-surface information of the defect in addition to defect surface information, therefore closing the defect analysis loop on the same platform. Sub-surface defects such as embedded defects and electrical defects are often yield limiting nature and require cross-section information to determine failure mode and the root cause. The main advantage of integrated SEM-FIB is it provides much shorter root cause analysis cycle time and thus improve yield and fab productivity. Feedback time can be cut from typically 1-2 days to several hours, saving valuable time for process trouble-shooting. It eliminates the risk of damaging the samples due to handling and the need to re-localize the defect of interest prior to cross-section. Moreover, the cross-sectioned wafer can be returned to production by excluding the affected die instead of scrapping the whole wafer which is often desirable especially for 300mm wafer. FIB milling principle of operation is displacement of surface materials through atom sputtering effect by bombardment of the surface with high energy gallium ions. Defect analysis flow begins with wafer inspection which generates defect map followed by defect review on SEM-FIB tool. Defect of interest was identified and can be located easily when switching to FIB microscope since the exact defect location has been established during SEM review, which is sometimes very challenging for offline FIB tool especially for electrical defects and tiny defects. Defect surface area usually coated with a thin layer of platinum or tungsten to protect the surface from milling damage. Defect cross-sectioning by FIB milling are then performed. Decoration effect by XeF2 gas etching is often required to enhance the contrast between the layers. Cross-section SEM image are then taken at 45 degree tilt angle. This paper provides case studies on how the tool was effectively use to solve process issues through defect cross section examination. Identifying electrical defects root cause are challenging as it may involve few process steps upstream and often require cross sectioning. With integrated SEM-FIB, possible root causes of various electrical defects on copper CMP layers were determined easily within shortest amount of time.
机译：FIB（聚焦离子束）集成到自动缺陷综述SEM提供了新的尺寸以缺陷根本原因分析。它从故障分析实验室带来了缺陷横截面应用到洁净室处理，除了缺陷表面信息之外，还提供缺陷的子表面信息，因此在同一平台上关闭缺陷分析循环。诸如嵌入缺陷和电缺陷的子表面缺陷通常是产生限制性的，并且需要截面信息来确定失败模式和根本原因。集成的SEM-FIB的主要优点是提供了更短的根本原因分析周期时间，从而提高产量和FAB生产率。反馈时间可以从典型1-2天切割到几个小时，为过程射击节省有价值的时间。它消除了由于处理而损坏样品的风险，并且在横截面之前需要重新定位利息的缺陷。此外，可以通过排除受影响的模具而不是刮削通常需要特别需要的300mm晶片的整个晶片来返回横截面晶片。 FIB铣削操作原理是通过轰击表面的原子溅射效果使表面材料的位移通过具有高能量镓离子的轰击。缺陷分析流程开始于晶圆检查，从而在SEM-FIB工具上产生缺陷映射。识别出感兴趣的缺陷，并且可以在切换到FIB显微镜时容易地定位，因为在SEM审查期间确立了确切的缺陷位置，这有时对于离线FIB工具有时非常具有挑战性，尤其是用于电气缺陷和微小缺陷。缺陷表面区域通常涂有薄层铂或钨，以保护表面免受研磨损坏。然后进行FIB铣削缺陷横截面。通常需要XeF2气体蚀刻的装饰效果来增强层之间的对比度。然后以45度倾斜角度拍摄横截面SEM图像。本文提供了关于如何通过缺陷横截面检查求解工艺问题的工具如何使用的案例研究。识别电缺陷根本原因是具有挑战性的，因为它可能涉及少数过程步骤上游并且通常需要横截面。通过集成的SEM-FIB，在最短的时间内容易确定铜CMP层上各种电缺陷的可能根本原因。

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