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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Faster Root Cause Analysis With Integrated SEM-FIB Application
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Faster Root Cause Analysis With Integrated SEM-FIB Application

机译：集成SEM-FIB应用程序可更快地进行根本原因分析

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Integration of FIB (focused ion beam) into an automatic defect review SEM provide new dimension to defect root cause analysis. It brings out defect cross-section application from failure analysis lab to the clean room process, providing sub-surface information of the defect in addition to defect surface information, therefore closing the defect analysis loop on the same platform. Sub-surface defects such as embedded defects and electrical defects are often yield limiting nature and require cross-section information to determine failure mode and the root cause. The main advantage of integrated SEM-FIB is it provides much shorter root cause analysis cycle time and thus improve yield and fab productivity. Feedback time can be cut from typically 1-2 days to several hours, saving valuable time for process trouble-shooting. It eliminates the risk of damaging the samples due to handling and the need to re-localize the defect of interest prior to cross-section. Moreover, the cross-sectioned wafer can be returned to production by excluding the affected die instead of scrapping the whole wafer which is often desirable especially for 300mm wafer. FIB milling principle of operation is displacement of surface materials through atom sputtering effect by bombardment of the surface with high energy gallium ions. Defect analysis flow begins with wafer inspection which generates defect map followed by defect review on SEM-FIB tool. Defect of interest was identified and can be located easily when switching to FIB microscope since the exact defect location has been established during SEM review, which is sometimes very challenging for offline FIB tool especially for electrical defects and tiny defects. Defect surface area usually coated with a thin layer of platinum or tungsten to protect the surface from milling damage. Defect cross-sectioning by FIB milling are then performed. Decoration effect by XeF2 gas etching is often required to enhance the contrast between the layers. Cross-section SEM image are then taken at 45 degree tilt angle. This paper provides case studies on how the tool was effectively use to solve process issues through defect cross section examination. Identifying electrical defects root cause are challenging as it may involve few process steps upstream and often require cross sectioning. With integrated SEM-FIB, possible root causes of various electrical defects on copper CMP layers were determined easily within shortest amount of time.
机译：将FIB（聚焦离子束）集成到自动缺陷检查SEM中，为缺陷根本原因分析提供了新的维度。它将缺陷横截面应用程序从故障分析实验室应用到洁净室过程中，除了提供缺陷表面信息外，还提供缺陷的次表面信息，从而在同一平台上闭合了缺陷分析循环。诸如嵌入式缺陷和电气缺陷之类的次表面缺陷通常具有产量限制的性质，并且需要横截面信息来确定故障模式和根本原因。集成式SEM-FIB的主要优点是，它可以缩短根本原因分析周期，从而提高良率和工厂生产率。反馈时间通常可以从1-2天减少到几个小时，从而节省了宝贵的时间来进行过程故障排除。它消除了由于处理而损坏样品的风险，以及消除了在横截面之前重新定位目标缺陷的需要。此外，可以通过排除受影响的管芯而不是报废整个晶片来恢复横截面晶片的生产，这对于300mm晶片尤其是经常需要的。 FIB铣削的工作原理是通过高能镓离子轰击表面，通过原子溅射效应置换表面材料。缺陷分析流程从晶片检查开始，该检查会生成缺陷图，然后在SEM-FIB工具上检查缺陷。由于在SEM审查期间已经确定了确切的缺陷位置，因此在切换到FIB显微镜时就可以识别出感兴趣的缺陷，并且可以轻松地找到感兴趣的缺陷，这对于离线FIB工具（尤其是电缺陷和微小缺陷）有时是非常具有挑战性的。缺陷表面通常涂有一层薄薄的铂或钨，以保护表面免受铣削损坏。然后通过FIB铣削进行缺陷横截面处理。通常需要通过XeF2气体蚀刻来产生装饰效果，以增强层之间的对比度。然后以45度倾斜角拍摄横截面SEM图像。本文提供了有关如何有效使用该工具通过缺陷横截面检查解决工艺问题的案例研究。确定电气缺陷的根本原因具有挑战性，因为它可能涉及上游的几个工艺步骤，并且经常需要横截面。通过集成的SEM-FIB，可以在最短的时间内轻松确定铜CMP层上各种电气缺陷的可能根本原因。

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