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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >EUV Wavefront Metrology at EUVA
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EUV Wavefront Metrology at EUVA

机译：EUV Wavefront Metrology在Euva

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Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories, namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.
机译：具有0.1nm rms精度的投影光学器件的波前像差的精确测量是开发极端紫外（EUV）光刻的必不可少的。为了研究测量方法，我们建立了具有内置的Schwarzschild型光学器件的实验EUV干涉仪（EEI）作为测试光学器件，并以Syschrotron辐射设备为源光线的波长提供13.5nm的EUV辐射。 EEI可以轻松评估EUV干涉机的几种方法。这些方法可分为两类，即点衍射干涉仪（PDI）和侧向剪切干涉仪（LSI）和实验比较。最后，使用PDI方法实现了0.045nm的再现性，并且除去特定误差后的残余系统误差减少到不包括轴对称像差的0.064nm。此外，LSI型方法之一还证明了对投影光学器件的组装具有足够的准确性。

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