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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >EUV Wavefront Metrology at EUVA
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EUV Wavefront Metrology at EUVA

机译：EUVA的EUV Wavefront计量

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摘要

Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories, namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.
机译：精确测量投影光学器件的波前像差具有0.1 nm RMS精度对于开发极紫外（EUV）光刻是必不可少的。为了研究测量方法，我们构建了实验EUV干涉仪（EEI），该干涉仪内置Schwarzschild型光学器件作为测试光学器件，并从同步辐射装置中获得了波长为13.5 nm的EUV辐射作为光源。 EEI可以轻松评估多种EUV干涉术替换光学部件的方法。这些方法可分为两类，即点衍射干涉仪（PDI）和横向剪切干涉仪（LSI），并进行了实验比较。最终，通过PDI方法获得了0.045nm RMS的重现性，除去轴向误差后，消除了指定误差后的残留系统误差降至0.064nm RMS。另外，还证明了一种LSI型方法对于投影光学器件的组装具有几乎足够的精度。

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