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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >Mask inspection method using the electron beam inspection system based on projection electron microscopy
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Mask inspection method using the electron beam inspection system based on projection electron microscopy

机译：基于投影电子显微镜的电子束检测系统掩模检查方法

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We developed the electron beam inspection system based on projection electron microscopy (EBI-PEM), and then applied this system to inspection of mask defects. Usually, inspection of mask defects (such as monitoring of growing defects) is carried out with resist pattern on Si wafer by using an optical inspection tool. In recent years, the shrinking of the design rule for LSI devices has fueled demand for mask inspection for small defects, which are hard to detect with the resolution of an optical inspection tool. Therefore, a high-resolution electron beam inspection tool is desired. However, conventional electron beam inspection systems based on scanning electron microscopy (EBI-SEM) require very long inspection time (10-100 times longer than in the case of optical inspection tool) and inspection costs are very high. In addition, it is difficult to inspect resist pattern by using an electron beam inspection tool, because of the charge- up problem. In order to solve the problem, we examined a new mask inspection method using an electron beam inspection system based on EBI-PEM. Although, EBI-PEM have an advantage in terms of inspection speed, it is more difficult to inspect resist pattern by EBI-PEM than by EBI-SEM, because EBI-PEM is very sensitive to charge-up of a sample surface. Therefore, we tried a method in which inspection is performed after transferring a pattern to SiO2 thin film formed on Si wafer. By optimizing the thickness of SiO2 thin film and the electron beam condition of EBI-PEM, we were able to minimize the influence of charge-up and obtained a higher contrast image. Using this method, EBI-PEM achieved inspection sensitivity of 35nm in the case of programmed defect wafer. We confirmed the probability of realizing high-speed and high-resolution mask inspection by using EBI-PEM.
机译：我们开发了基于投影电子显微镜（EBI-PEM）的电子束检测系统，然后将该系统应用于检查掩模缺陷。通常，通过使用光学检查工具，通过抗蚀剂图案对掩模缺陷进行检查（例如对生长缺陷的监测）。近年来，LSI器件的设计规则的缩小已经促使对小缺陷的掩模检查的需求，这很难通过光学检查工具的分辨率来检测。因此，需要高分辨率电子束检查工具。然而，基于扫描电子显微镜（EBI-SEM）的传统电子束检查系统需要非常长的检查时间（比光学检查工具的情况长10-100倍），并且检查成本非常高。另外，由于充电问题，难以使用电子束检查工具检查抗蚀剂图案。为了解决问题，我们检查了一种基于EBI-PEM的电子束检测系统的新掩模检查方法。尽管EBI-PEM在检查速度方面具有优势，但更难以通过EBI-SEM检查抗蚀剂图案，因为EBI-PEM对样品表面的充电非常敏感。因此，我们尝试了一种方法，其中在将图案转移到在Si晶片上形成的SiO 2薄膜之后进行检查。通过优化SiO 2薄膜的厚度和EBI-PEM的电子束条件，我们能够最小化充电的影响并获得更高的对比度图像。使用该方法，在编程缺陷晶片的情况下，EBI-PEM实现了35nm的检查敏感性。我们确认通过使用EBI-PEM实现高速和高分辨率掩模检查的可能性。

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