首页> 外文会议>IEEE Photovoltaic Specialist Conference >Influence of CdS and Zn_xSn_(1-x)O_y Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films
【24h】

Influence of CdS and Zn_xSn_(1-x)O_y Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films

机译:CD和Zn_XSN_(1-X)O_Y缓冲层对Cu(In,Ga)Se2薄膜的光致发光的影响

获取原文

摘要

In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In,Ga)Se_2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited Zn_xSn_(1- x)O_y (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.
机译:在这项工作中,给出了通过光致发光对Cu(In,Ga)Se_2(CIGS)薄膜对不同缓冲层的影响的光学研究。将化学浴沉积CD与原子层沉积Zn_XSN_(1- x)O_Y(ZnSNO)进行比较。两种样品中的CIG体积和CIGS /缓冲界面受到波动电位的强烈影响,对于具有ZnSNO缓冲层的样品不太明显。该研究强调ZnSNO半导体在基于CIGS的太阳能电池中的潜在应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号