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首页> 外文会议>International Electron Devices Meeting >Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K
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Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K

机译：通过应变工程的自温补偿GaN MEMS谐振器高达600 k

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Intrinsically, MEMS resonators have a large temperature coefficient of frequency (TCF) more than -20 ppm/K. Although several methods were developed to reduce the TCF, the quality (Q) factors of the resonators are markedly degraded. Here, we demonstrate a novel self-temperature-compensated strategy for GaN-based MEMS resonator with an ultra-low TCF without losing the Q factors up to 600 K by using elastic strain engineering. Different from the conventional flexural modes, the internal thermal stress improves the TCF of the GaN MEMS resonator by over 10 times to be as low as ~ ppm/K even at 400 K, without losing the highest Q factor of 105 even up to 600 K.
机译：本质上，MEMS谐振器具有大于-20ppm / k的频率（TCF）的较大温度系数。尽管开发了几种方法以减少TCF，但谐振器的质量（Q）因子显着降低。在这里，我们通过使用弹性应变工程，展示了具有超低TCF的GaN的MEMS谐振器的新型自我温度补偿策略，而不会使Q因子高达600 k。与传统的弯曲模式不同，内部热应力将GaN MEMS谐振器的TCF改善超过10次，即使在400 k下也可以低至ppm / k，而不会失去最高Q因子10 5 甚至高达600 k。

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