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首页> 外文会议>International Electron Devices Meeting >Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress
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Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress

机译：在各种正电场应力下SiC MOSFET中的栅极氧化物不稳定性和寿命

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摘要

We investigated the positive bias temperature instability (PBTI) in 4H-SiC MOSFETs under a wide range of high oxide electric field (Eox) stress. The purpose of this study is to deepen the understanding of this phenomenon and experimentally evaluate the lifetime prediction model. For the first time, we analyzed the process of electron capture in SiO2 under high Eox stress by focusing on the region where electron capture is dominant and found systematical behavior of threshold voltage drift (ΔVth). Additionally, the amount of charges injected into the gate oxide (Qstress) was found to be a criterion for ΔVth in a high Eox region. Finally, it was presented that lifetime under PBTI testing exhibits a power-law relationship with Eox, resulting in longer lifetime than that predicted by the widely used E-model. Insights from the presented analyses must be beneficial for PBTI modeling and testing of SiC MOSFETs.
机译：我们在各种高氧化物电场下调查了4H-SiC MOSFET中的正偏置温度不稳定（PBTI）（E. ox ） 压力。本研究的目的是加深对这种现象的理解并通过实验评估寿命预测模型。我们首次分析了SiO中电子捕获的过程 2 在高E. ox 通过专注于电子捕获所占主导地位并发现阈值电压漂移的系统行为（ΔV th ）。另外，注入栅极氧化物的电荷量（Q压力）被发现是ΔV的标准 th 在高中 ox 地区。最后，介绍了PBTI测试下的寿命呈现与e的幂律关系 ox ，导致比广泛使用的电子模型预测的寿命更长。来自所提出的分析的见解必须有利于PBTI建模和测试SiC MOSFET的测试。

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