Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

著录项

• 来源
  《International Conference of Chinese Society of Micro-Nano Technology;Annual Conference of the Chinese Society of Micro-Nano Technology》|2010年|p.14-17|共4页
• 会议地点 Xian(CN);Xian(CN)
• 作者

  Jianan Lv; Zhenchuan Yang; Guizhen Yan; Yong Cai; Baoshun Zhang; Kevin J. Chen;

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• 作者单位

  National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, 100871, CHINA,Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215125, CHINA;

  National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, 100871, CHINA;

  National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, 100871, CHINA;

  Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215125, CHINA;

  Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215125, CHINA;

  Department of Electronic and Computer Engineering, Hong Kong University of Science Technology, Clear Water Bay, Kowloon, Hong Kong, CHINA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 光学仪器;微电子学、集成电路（IC）;
• 关键词

  gallium nitride; cantilevers; MEMS; bending test;

  机译：氮化镓悬臂MEMS;弯曲试验;