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Piezoresistive sensitivity and Al ohmic contact of highly doped polycrystalline silicon nano thin films

机译:高掺杂多晶硅纳米薄膜的压阻灵敏度和Al欧姆接触

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摘要

The piezoresistive and ohmic contact properties of polycrystalline silicon nano thin films were investigated in this paper. The polycrystalline silicon films with different thicknesses and doping concentrations were deposited by LPCVD and doped with boron highly, and then the cantilever beam samples were fabricated by photolithography and wet etching. By measuring the gauge factor and specific contact resistivity, the specific contact resistivity of Al contacts can reach 2.4×10~(-3)Ω·cm~2 after the alloying at 450 ℃ for 20 min; the enhanced piezoresistive effect of highly doped polycrystalline silicon nano thin films was discovered. The conclusions indicated that the enhanced piezoresistive sensitivity of PNTFs is due to the modification of depletion region barrier by ultra high doping and film thickness thinning and the enhancement of tunneling piezoresistive effect. The distinct piezoresistive phenomenon of PNTFs could be utilized for the development and fabrication of miniature piezoresistive sensors.
机译:本文研究了多晶硅纳米薄膜的压阻和欧姆接触特性。通过LPCVD沉积不同厚度和掺杂浓度的多晶硅膜,并高度掺杂硼,然后通过光刻和湿法蚀刻制备悬臂梁样品。通过测量规格因子和比接触电阻率,在450℃合金化20min后,Al触点的比电阻可以达到2.4×10〜(-3)Ω·cm〜2。发现了高掺杂多晶硅纳米薄膜的增强的压阻效应。结论表明,PNTFs的压阻敏感性增强是由于超高掺杂和薄膜厚度减薄对耗尽区势垒的修改以及隧穿压阻效应的增强所致。 PNTF独特的压阻现象可用于微型压阻传感器的开发和制造。

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