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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >New OPC Verification Method using Die-to-Database Inspection
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New OPC Verification Method using Die-to-Database Inspection

机译：使用管芯到数据库检查的新OPC验证方法

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The minimum feature size of new generation memory devices is approaching down to 50 nm era. And a very precise CD control is demanded not only for cell layouts but also for core and peripheral layouts of DRAM devices. However, as NA of lens system grows higher and higher and Resolution Enhancement Techniques (RETs) becomes more and more aggressive, isolated-dense bias increases and process window for the core and peripheral layouts decreases dramatically. So, the burden of OPC increases in proportion and it is requisite to verify as many features as possible on wafer. If possible, it would be desirable to verify all the features in a die. Recently, a novel inspection tool has been developed which can verify all kinds of patterns on wafer based on Die to Database copmarison method. It can identify all the serious systematic defects of nm order size error from the original layout target and feed back the systematic error points to OPC for more accurate model tuning. In addition we can obtain the full field CD distribution diagram of some specific transistors with hundreds of thousands of measurement data. So, we can analyze the root cause of the CD distribution in a field, such as mask CDU or lens aberrations and so on. And we can also perform Process Window Qualification of all the features in a die. In this paper, OPC verification methodology using the new inspection tool will be introduced and the application to the analysis of full field CD distribution and Process Window Qualification will be presented in detail.
机译：新一代存储设备的最小功能尺寸已接近50纳米时代。并且不仅要求单元布局而且要求DRAM设备的核心和外围布局都需要非常精确的CD控制。但是，随着镜头系统的NA越来越高，分辨率增强技术（RETs）越来越强大，隔离密度偏差增加，核心和外围布局的处理窗口急剧减小。因此，OPC的负担成比例地增加，并且有必要在晶片上验证尽可能多的特征。如果可能的话，将需要检验模具中的所有特征。近来，已经开发了一种新颖的检查工具，该工具可以基于管芯到数据库的连接方法来验证晶片上的各种图案。它可以从原始布局目标中识别出纳米级尺寸误差的所有严重系统缺陷，并将系统误差点反馈给OPC，以进行更精确的模型调整。另外，我们可以获得具有数十万个测量数据的某些特定晶体管的全场CD分布图。因此，我们可以分析CD分布在现场的根本原因，例如掩模CDU或镜头像差等。我们还可以对模具中的所有功能执行“加工窗口鉴定”。在本文中，将介绍使用新的检查工具进行OPC验证的方法，并将详细介绍其在全现场CD分布和过程窗口鉴定分析中的应用。

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