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AIM technology for Non-Volatile Memories microelectronics devices

机译:非易失性存储器微电子设备的AIM技术

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Accurate and precise overlay metrology is a critical requirement in order to achieve high product yield in microelectronic manufacturing. Meeting the tighter overlay measurement error requirements for 90nm technology and beyond is a dramatic challenge for optical metrology techniques using only conventional overlay marks like Bar in Bar (BiB) or Frame in Frames (FiF). New deficiencies, affecting traditional overlay marks, become evident as microlithography processes are developed for each new design rule node. The most serious problems are total measurement uncertainty, CMP process robustness, and device correlation. In this paper we will review the superior performances of grating-based AIM marks to provide a complete solution to control lithography overlay errors for new generation devices. Examples of successful application of AIM technology to FEOL and Cu-BEOL process steps of advanced non volatile memory devices manufacturing are illustrated. An additional advantage of the adoption of AIM marks is that the significant reduction of target noise versus conventional marks revealed systematic differences within the lithography cluster which were previously obscure offering a new tool to optimize litho cells. In this paper we demonstrated that AIM target architecture enables high performance metrology with design rule segmented targets - a prerequisite to have overlay marks fully compatible with design rule sensitive process steps.
机译:为了在微电子制造中实现高产品良率,准确而精确的覆盖层计量是至关重要的要求。对于仅使用Bar Bar(BiB)或Frame in Frames(FiF)等常规重叠标记的光学计量技术,要满足90nm及更高技术对重叠测量误差的严格要求是一项巨大的挑战。随着为每个新设计规则节点开发微光刻工艺,影响传统覆盖标记的新缺陷变得显而易见。最严重的问题是总测量不确定度,CMP过程的鲁棒性和器件相关性。在本文中,我们将回顾基于光栅的AIM标记的优越性能,以为控制新一代器件的光刻重叠误差提供一个完整的解决方案。举例说明了AIM技术成功应用于高级非易失性存储设备制造的FEOL和Cu-BEOL工艺步骤的示例。采用AIM标记的另一个优点是,目标噪声相对于传统标记的显着降低表明了光刻集群内的系统差异,这些差异以前是晦涩难懂的,因此可以提供一种优化光刻单元的新工具。在本文中,我们证明了AIM目标架构可通过设计规则分段目标实现高性能计量,这是使覆盖标记与设计规则敏感的工艺步骤完全兼容的前提。

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