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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Comparison of I-line and DUV high energy implant litho processes
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Comparison of I-line and DUV high energy implant litho processes

机译：I线和DUV高能植入光刻工艺的比较

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For capacity reasons, it is interesting for us to have the flexibility of switching lithography processes between DUV and I-line steppers. The following discussion concentrates on high energy tilted implants of CMOS technology, critical enough to be worth running on the more expensive DUV equipment. As far as the differences are understood at the level of the printing, as well as the dissimilarities during the following implantation steps, it is possible using the same reticle and with minor target adjustments, to switch between the 2 tools/processes when required. This paper investigates the most important differences between the functionality of a same implant layer making use of the two wavelengths. Taken as high energy implant mask for several successive ion implantations, the resist film considered here is 1.6 Urn thick. The taper profiles of I-line and DUV resist are shown after development, and after the successive implantation steps. Both wavelengths provide straight profiles after development, with one main difference: a slight footing for the I-line resist. This can be very well seen on the corresponding top down pictures revealing more tapers for the I-line process than for DUV. The first implantation step following development influences the profiles the most. In fact the profile of the DUV resist changes considerably while the one with I-line resist remains unchanged. That can be explained by the fact that the aliphatic structure of DUV photoresist is less resistant to degradation by ion bombardment as compared to the highly aromatic chemical structure of I-line photoresist. The subsequent implant steps of lower energy do not further influence the tapers, not even in the case of the I-line film. Therefore the biggest shrinkage occurs during the first implantation and all the next ion sequences will see this first deformation without changing it. Finally, simulation show that, an adjustment of the reticle OPC by adding serifs can be beneficial to the I-line layer to diminish corner rounding where the footing/tapering can be worse.
机译：出于产能原因，让我们感兴趣的是具有在DUV和I线步进器之间切换光刻工艺的灵活性。以下讨论集中于CMOS技术的高能倾斜注入，其重要性足以使其在更昂贵的DUV设备上运行。据了解在印刷水平上的差异以及后续植入步骤中的差异，有可能使用相同的标线并进行较小的目标调整，以便在需要时在两种工具/工艺之间切换。本文研究了利用两个波长在同一植入层的功能之间最重要的区别。作为几次连续离子注入的高能注入掩模，此处考虑的抗蚀剂膜厚度为1.6 n。在显影之后以及相继的注入步骤之后，显示了I线和DUV抗蚀剂的锥度轮廓。两种波长在显影后都提供直线分布，但有一个主要区别：I线抗蚀剂的轻微基脚。在相应的自上而下的图片中可以很好地看出这一点，与使用DUV相比，I线工艺的锥度更大。开发之后的第一个植入步骤对轮廓的影响最大。实际上，DUV抗蚀剂的轮廓发生了很大变化，而带有I线抗蚀剂的抗蚀剂保持不变。这可以通过以下事实来解释：与I线光刻胶的高度芳族化学结构相比，DUV光刻胶的脂族结构对离子轰击的抗性降低。随后的较低能量的注入步骤不会进一步影响锥度，即使在I线膜的情况下也是如此。因此，最大的收缩发生在第一次注入过程中，所有接下来的离子序列将看到该第一次变形而不改变它。最后，仿真表明，通过添加衬线来调整标线OPC可能有益于I线层，以减少拐角变圆的情况，而拐角变圆会导致立脚/锥度变差。

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