Comparison among the formation processes of extended defects in Si under irradiation with low-energy H~+, He~+ ions and high-energy electrons

K. Arakawa; K. Saitoh; H. Mori; K. Ono

首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Comparison among the formation processes of extended defects in Si under irradiation with low-energy H~+, He~+ ions and high-energy electrons

【24h】

Comparison among the formation processes of extended defects in Si under irradiation with low-energy H~+, He~+ ions and high-energy electrons

机译：低能H〜+，He〜+离子和高能电子辐照下硅中扩展缺陷形成过程的比较

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Formation processes and characteristics of platelet-like extended defects in FZ Si under the irradiation with low-energy H~+ ions are examined, and the results are compared with those from He~+ ion and high-energy electron irradiation. Silicon discs with (011) surfaces are irradiated by 5 keV H~+, 10 keV He~+ ions between 570 and 870 K, and by 1000 keV electrons between 470 and 670 K. It is considered from the temperature dependence of the characteristics of extended defects induced by H~+ ion irradiation, that the interaction between self-interstitial atoms and hydrogen becomes weak above 770 K. The formation of {113} interstitial-type defects is enhanced by hydrogen and helium, and the degree is stronger for hydrogen. It is concluded from the difference between aspect ratios of {113} defects induced by the irradiation with both kinds of ions, that the mechanism for the enhancement by hydrogen is different from that by helium.

机译：研究了低能H〜+离子辐照下FZ Si片状扩展缺陷的形成过程和特性，并将其与He〜+离子和高能电子辐照的结果进行了比较。表面（011）的硅圆片受到570至870 K之间的5 keV H〜+，10 keV He〜+离子和470至670 K之间的1000 keV电子的辐照。 H〜+离子辐照引起的扩展缺陷，自填原子与氢之间的相互作用在770 K以上变得较弱。{113}填隙型缺陷的形成被氢和氦增强，氢的程度更强。由两种离子辐照引起的{113}缺陷的纵横比之间的差异可以得出结论，氢的增强机理与氦的增强机理不同。

著录项

来源
《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2003年第5期|p.76-80|共5页
作者
K. Arakawa; K. Saitoh; H. Mori; K. Ono;
展开▼
作者单位

Department of Material Science, Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;原子能技术;
关键词
extended defect; point defect; radiation damage; {001} defect; {113} defect;

机译：缺陷扩大;点缺陷辐射损伤;{001}缺陷;{113}缺陷;

相似文献

外文文献
中文文献
专利

1. Formation process of dislocation loops in iron under irradiations with low-energy helium, hydrogen ions or high-energy electrons [J] . Arakawa K., Mori H., Ono K. Journal of Nuclear Materials: Materials Aspects of Fission and Fusion . 2002,第Pta1期

机译：低能氦，氢离子或高能电子辐射下铁中位错环的形成过程
2. Atomic scale simulation of extended defects formation under high energy electron irradiation: space distribution [J] . Amghar A., Idrissi-Saba H., Gue AM., Physica, B. Condensed Matter . 2001,第1a4期

机译：高能电子辐照下扩展缺陷形成的原子尺度模拟：空间分布
3. Side-by-Side Comparison of DNA Damage Induced by Low-Energy Electrons and High-Energy Photons with Solid TpTpT Trinucleotide [J] . Yeunsoo Park, Anita R. Peoples, Guru S. Madugundu The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2013,第35期

机译：固体TpTpT三核苷酸对低能电子和高能光子引起的DNA损伤的并排比较
4. Defect structure changes in the single Si-crystals afterirradiation by high-energy electrons and long natural agingby high-resolution three-crystal X-ray diffractometry [C] . V.V. Dovganyuk, T.V. Lytvynchuk, V.V. Slobodyan, International Conference on Correlation Optics . 2008

机译：高能量电子和长期自然变老度的单晶体流动的缺陷结构变化，高分辨率三晶X射线衍射法
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Loss of Cellular Transformation Efficiency Induced by DNA Irradiation with Low-Energy (10 eV) Electrons [O] . Saloua Kouass Sahbani, Leon Sanche, Pierre Cloutier, -1

机译：低能量（10 eV）电子照射DNA引起的细胞转化效率损失
7. Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM [O] . Fedina Gutakovskii Aseev, J. Vanhellemont (c 2007

机译：在HREm中通过原位电子辐照研究内部点缺陷的聚类在si晶体中形成扩展的缺陷

Comparison among the formation processes of extended defects in Si under irradiation with low-energy H~+, He~+ ions and high-energy electrons

摘要

著录项

相似文献

相关主题

期刊订阅