• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Satellite spot defect reduction on 193nm Contact Hole lithography using Photo Cell Monitor methodology
【24h】

Satellite spot defect reduction on 193nm Contact Hole lithography using Photo Cell Monitor methodology

机译：使用Photo Cell Monitor方法在193nm接触孔光刻技术上减少卫星斑点缺陷

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The goal of overall process and yield improvement requires a litho defect management and reduction strategy, which includes several layers of tactical methods. Defects may be identified through a number of schemes, including After-Develop Inspection (ADI), which was the primary tool in this study in our 0,13μ fab. Defects on 193nm contact hole lithography were identified using a KLA-Tencor 2351 High Resolution Imaging Patterned Wafer Inspection System, coupled with in-line Automatic Defect Classification (iADC). The optimized inspection was used at the core of the Photo Cell Monitor (PCM) to isolate critical defect types. PCM uses the fab's standard production resist coat, exposure, develop, and rinse process, with the focus and exposure optimized for resist on silicon test wafers. Through Pareto analysis of 193nm defects, one defect type, called satellite spot, was targeted for immediate improvement and monitoring. This paper describes the work done in improving the litho defectivity. The work includes optimization of inspection and classification parameters and the Design of Experiments (DOE) to identify the source (including the interaction between the resist and developer) and contributing factors. Several process modifications were identified which resulted in lowered defectivity up to complete suppression of satellite spot defects, although at higher process complexity and cost. This work was also done in conjunction with resist suppliers, which used the same inspection to confirm the problem at their facilities. The work with the suppliers continues with the goal of identifying a less expensive permanent solution.
机译：总体过程和产量提高的目标需要光刻缺陷管理和减少策略，其中包括几层战术方法。可以通过多种方案来识别缺陷，其中包括开发后检查（ADI），这是我们的0.13μ晶圆厂中这项研究的主要工具。使用KLA-Tencor 2351高分辨率成像图案化晶圆检查系统以及在线自动缺陷分类（iADC），可以识别193nm接触孔光刻上的缺陷。优化的检查用于光电管监视器（PCM）的核心，以隔离关键缺陷类型。 PCM使用晶圆厂的标准生产抗蚀剂涂层，曝光，显影和冲洗工艺，其聚焦和曝光针对硅测试晶圆上的抗蚀剂进行了优化。通过对193nm缺陷的Pareto分析，一种缺陷类型称为卫星斑点，可以立即进行改进和监控。本文介绍了在改善光刻缺陷性方面所做的工作。这项工作包括检查和分类参数的优化以及实验设计（DOE），以识别来源（包括抗蚀剂和显影剂之间的相互作用）和影响因素。鉴定出几种工艺改进方法，尽管提高了工艺复杂性和成本，但降低了缺陷率直至完全抑制了卫星斑点缺陷。这项工作也与抗蚀剂供应商一起完成，抗蚀剂供应商使用相同的检查来确认其设施中的问题。与供应商的合作继续以确定较便宜的永久解决方案为目标。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号