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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Characterization of InN Thin Films Grown by IBAD Method
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Characterization of InN Thin Films Grown by IBAD Method

机译：IBAD法生长的InN薄膜的表征

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摘要

InN belongs to Group Ill-Nitrides materials and shows several applications. As examples there are lasers, LEDs, high frequency transistors, solar cells and optical sensors. Indium nitride has been the subject of intensive research in the past few years due to its potential applications in optoelectronic (1,2,3).rnThis paper shows a study of deposition parameters influence on optical and electrical properties of InN thin films deposited by Ion Beam Assisted Deposition (IBAD). It is a coating method that combines vacuum evaporation with irradiation by an energetic ion beam extracted from an ion gun. The combination of an ion gun and an evaporator leads to the IBAD method to be controllable, reproducible and versatile (4).
机译：InN属于III族氮化物材料，并显示出几种应用。例如，有激光器，LED，高频晶体管，太阳能电池和光学传感器。氮化铟由于其在光电（1,2,3）中的潜在应用而在过去的几年中受到广泛研究。rn本文研究了沉积参数对离子沉积InN薄膜的光学和电学性质的影响的研究。束辅助沉积（IBAD）。这是一种将真空蒸发与从离子枪中提取的高能离子束照射相结合的涂覆方法。离子枪和蒸发器的结合使IBAD方法可控，可重现且用途广泛（4）。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    M. Sparvoli; J. F. D. Chubaci; R. D. Mansano;

  • 作者单位

    Laboratório de Sistemas Integraveis, Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, 153, 05508-900, S3o Paulo, SP, Brasil;

    Laboratório de Sistemas Integraveis, Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, 153, 05508-900, S3o Paulo, SP, Brasil;

    Laboratório de Sistemas Integraveis, Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, 153, 05508-900, S3o Paulo, SP, Brasil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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