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首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Analysis of the Low-Frequency Noise in Graded-Channel and Standard SOI nMOSFET
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Analysis of the Low-Frequency Noise in Graded-Channel and Standard SOI nMOSFET

机译：渐变通道和标准SOI nMOSFET中的低频噪声分析

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摘要

Silicon-On-Insulator (SOI) nMOSFET with asymmetric doping concentration in the channel, so-called graded-channel (GC SOI MOSFET) and schematically shown in Fig. 1, has been developed in order to raise the drain breakdown voltage of fully depleted SOI transistors. In this structure, a length L_(ld) at the drain side is screened from threshold voltage ion implantation remaining with the intrinsic SOI substrate doping concentration, while the threshold voltage (VT) implantation is performed at the source side of the device. In a first approximation, the lightly doped region can be understood as an extension of the drain region, reducing the effective channel length (L_(eff)). Several works shows promising results, indicating a significant improvement in the drain conductance and saturation current, as well as a substantial reduction in the occurrence of parasitic bipolar effects (1-2). These characteristics make this device very attractive for analog applications, as already demonstrated in operational transconductance amplifiers, current mirrors, common-drain amplifiers and RF circuits (3-7).
机译：为了提高完全耗尽的漏极击穿电压，已开发出沟道中掺杂浓度不对称的绝缘体上硅（SOI）nMOSFET，即所谓的梯度沟道（GC SOI MOSFET），如图1所示。 SOI晶体管。在该结构中，从残留有固有SOI衬底掺杂浓度的阈值电压离子注入中筛选出漏极侧的长度L_（ld），而在器件的源极侧执行阈值电压（VT）注入。在第一近似中，轻掺杂区域可以理解为漏极区域的延伸，从而减小了有效沟道长度（L_（eff））。多项工作显示出令人鼓舞的结果，表明漏极电导和饱和电流有了显着改善，并且寄生双极效应的发生也大大减少了（1-2）。这些特性使该器件对于模拟应用非常有吸引力，如运算跨导放大器，电流镜，共漏极放大器和RF电路（3-7）所示。

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  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    E. L. R. da Silva; M. Miguez; M. de Souza; A. Arnaud; M. A. Pavanello;

  • 作者单位

    Department of Electrical Engineering, Centra Universitario da FEI, Sao Bernardo do Campo, Brazil;

    Department of Electrical Engineering, Universidad Catolica, Montevideo, Uruguay;

    Department of Electrical Engineering, Centra Universitario da FEI, Sao Bernardo do Campo, Brazil;

    Department of Electrical Engineering, Universidad Catolica, Montevideo, Uruguay;

    Department of Electrical Engineering, Centra Universitario da FEI, Sao Bernardo do Campo, Brazil;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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