The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors

机译：源极和漏极触点对纳米线晶体管自热效应的作用

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We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for V_g=V_d=1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

机译：我们发现，即使在存在环绕氧化物的情况下，在沟道长度为10 nm的硅纳米线晶体管中，自热效应也不明显。我们观察到在金属栅极远离沟道的结构中，对于V_g = V_d = 1.0 V，最大电流衰减为6％。总体上较小的电流衰减归因于这些结构中明显的速度过冲效应。与等温模拟相比，晶格温度曲线显示出适度的温度上升，并且由于自热效应，载流子的速度略有下降。

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《Microelectronics technology and devices - SBMicro 2010》|2010年|p.83-90|共8页
会议地点 Sao Paulo(BR);Sao Paulo(BR)
作者
D. Vasileska; A. Hossain; K. Raleva; S. M. Goodnick;
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Department of ECEE, Arizona State University, Tempe, AZ 85287-5706, USA;

Intel Corp., Chandler, AZ, USA;

Department of El, Univ. Sts. Cyril and Methodi, Skopje, 1000, Republic of Macedonia;

Department of ECEE, Arizona State University, Tempe, AZ 85287-5706, USA;

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正文语种 eng
中图分类半导体技术;
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1. The role of the source and drain contacts on self-heating effect in nanowire transistors [J] . D. Vasileska, A. Hossain, K. Raleva, Journal of Computational Electronics . 2010,第3a4期

机译：源极和漏极触点在纳米线晶体管中对自热效应的作用
2. Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts [J] . Tang W., Dayeh S.A., Picraux S.T., Nano letters . 2012,第8期

机译：具有硅化镍源极/漏极触点的超短沟道硅纳米线晶体管
3. Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain [J] . G. M. Cohen, M. J. Rooks, J. O. Chu, Applied Physics Letters . 2007,第23期

机译：具有用于源极和漏极的掺杂外延触点的纳米线金属氧化物半导体场效应晶体管
4. The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors [C] . D. Vasileska, A. Hossain, K. Raleva, Symposium on microelectronics technology and devices . 2010

机译：源极和漏极触点对纳米岩晶体管中自热效果的作用
5. Self-Heating Effects In Nanowire Transistors [D] . Hossain, Arif 2011

机译：纳米线晶体管中的自热效应
6. Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts [O] . Seung Su Baik, Seongil Im, Hyoung Joon Choi -1

机译：带有石墨烯和钛源极-漏极触点的二维MoS2场效应晶体管的功函数调整
7. Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts [O] . Seung Su Baik, Seongil Im, Hyoung Joon Choi 2017

机译：工作功能在二维MOS2场效应晶体管中调整，具有石墨烯和钛源 - 漏极触点

The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors

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