Integrated Photodetectors in CMOS Chips and their Spectral Sensitivity

机译：CMOS芯片中的集成光电探测器及其光谱灵敏度

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Diodes inherent in a CMOS process are light sensitive and could be exploited as photodetectors. To detect light the photo generated carriers need to be separated by the electrical field of an internal pn junction. They are either generated inside the depletion region or can get there by diffusion. The depth where these carriers are generated depends strongly on the wavelength. The generation profile, the pn junction depth and the diffusion length all impact the spectral sensitivity. A simple model is presented to describe these dependencies. It has enabled spectral response to be optimized within physical limits. Furthermore, a special diode was built and integrated which achieved more than 90% efficiency in the demanding blue corner of the visible spectrum. As the analytical description is based on only 5 parameters it can be incorporated in a behavioral diode model to support computer aided circuit design.

机译：CMOS工艺中固有的二极管对光敏感，可以用作光电探测器。为了检测光，需要通过内部pn结的电场将光生载流子分开。它们要么在耗尽区内部生成，要么可以通过扩散到达那里。产生这些载流子的深度在很大程度上取决于波长。生成轮廓，pn结深度和扩散长度都会影响光谱灵敏度。提供了一个简单的模型来描述这些依赖性。它使光谱响应能够在物理限制内优化。此外，还构建并集成了一种特殊的二极管，该二极管在苛刻的可见光谱蓝角处实现了90％以上的效率。由于分析说明仅基于5个参数，因此可以将其合并到行为二极管模型中以支持计算机辅助电路设计。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.265-274|共10页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
K. Bach; A. Voerckel; M. Franke;
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X-FAB Semiconductor Foundries AG, Haarbergstr. 67, 99090 Erfurt, Germany;

X-FAB Semiconductor Foundries AG, Haarbergstr. 67, 99090 Erfurt, Germany;

X-FAB Semiconductor Foundries AG, Haarbergstr. 67, 99090 Erfurt, Germany;

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Integrated Photodetectors in CMOS Chips and their Spectral Sensitivity

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