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Investigation of the Ⅲ-Ⅴ Oxidation Process for the Fabrication of Sub-Micron Three Dimensional Photonic Devices

机译:制备亚微米三维光子器件的Ⅲ-Ⅴ氧化工艺研究

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The lateral oxidation of epitaxially grown Al_xGa_(1-x)As layers is investigated in an open-chamber system based on a conventional horizontal tube furnace, and in a closed-chamber system. The oxidation is selective and depends on the Al content, process temperature, and process time. The process is characterized as a function of these parameters. The closed chamber system provides faster oxidation with superior control, repeatability and uniformity of the oxidation extent as compared to the open-chamber system. Based on these investigations of the oxidation reaction, we propose a unique method for realizing 3D photonic crystals in GaAs/AlGaAs-based material.
机译:在基于常规水平管式炉的开室系统和闭室系统中研究了外延生长的Al_xGa_(1-x)As层的横向氧化。氧化是选择性的,并且取决于Al含量,工艺温度和工艺时间。该过程的特征是这些参数的函数。与开放腔室系统相比,封闭腔室系统提供了更快的氧化速度,具有出色的控制性,可重复性和氧化程度的均匀性。基于对氧化反应的研究,我们提出了一种在GaAs / AlGaAs基材料中实现3D光子晶体的独特方法。

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