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THREE-DIMENSIONAL ELECTRONIC PHOTONIC INTEGRATED CIRCUIT FABRICATION PROCESS

机译:三维电子光子集成电路制造工艺

摘要

A device and the process for creating a three-dimensional electronic photonic circuit is disclosed. The process includes fabricating a standard high performance integrated circuit on a high resistivity silicon or a silicon-on-insulator substrate up to and including the passivation layer on top of transistors. Separately, a silicon-on-insulator wafer capped by an oxide layer is fabricated, then the two wafers are joined. The resultant device has photonic process elements (e.g. waveguides and photodetectors) fabricated in the top silicon layer. Continued processing interconnects the transistors and photonic elements with contacts and metallization levels to produces an electronic-photonic integrated circuit.
机译:公开了一种用于创建三维电子光子电路的设备和过程。该方法包括在高电阻率的硅或绝缘体上的硅衬底上制造标准的高性能集成电路,直到并包括在晶体管顶部的钝化层。分开地,制造由氧化物层覆盖的绝缘体上硅晶片,然后将两个晶片接合。所得装置具有在顶部硅层中制造的光子处理元件(例如,波导和光电检测器)。继续进行处理将晶体管和光子元件与触点和金属化层互连,以产生电子-光子集成电路。

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