Korea Research Institute of Standards and Science, 1 Doryong-Dong, Yuseong-Gu, Daejeon 305-340, Republic of Korea;
rnKorea Research Institute of Standards and Science, 1 Doryong-Dong, Yuseong-Gu, Daejeon 305-340, Republic of Korea;
rnDepartment of Physics, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon 305-764, Republic of Korea;
rnDepartment of Physics, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon 305-764, Republic of Korea;
rnDivision of Electrical and Computer Engineering, Hanyang University, Ansan city, Kyunggi-do 425-791, Republic of Korea;
机译:金属有机气相外延生长的Si(111)/ AIN界面的扫描透射电子显微镜研究
机译:金属有机化学气相沉积在Si(III)衬底上生长的AlN层的相变行为的衬底温度依赖性
机译:金属有机化学气相沉积在蓝宝石上生长的GaN薄膜的高分辨率透射电子显微镜,原子力显微镜和红外光谱的比较研究
机译:我们在Si底物上报告了常常数-FaN基的异质结场效应晶体管(HFET)。使用金属化学气相沉积(MOCVD)生长AlGaN / AIN / GaN异质结构。用于常关操作的HFET W.
机译:硒化锌镉外延层和低维结构的金属有机化学气相沉积和发光研究
机译:(001)-和(111)-SrTiO3衬底上生长的多铁性LaFeO3-YMnO3多层膜的显微结构表征
机译:等离子体辅助金属有机化学气相沉积法在Si(111)衬底上生长AlxGa1-xN / GaN异质结构薄膜的微观结构和光学性质