The atomic structure of dislocations and planar boundaries in GaN

机译：GaN中位错和平面边界的原子结构

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GaN layers contain densities (10~10 cm~-2) of threading dislocations,nanopipes,(0001) and {11 2-bar 0} stacking faults,and {10 1-bar 0} inversion domains.Three configurations have been found for pure edge dislocations,mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized.Two atomic configurations,related by a 1/6 <10 1-bar 0> stair rod dislocation,have been observed for the {11 2-bar 0} stacking fault in (Ga-Al)N layers.Such defects form on steps in epitaxial layers on the top of (0001) 6H-SiC; on (0001) sapphire,they appear on coalescence of two adjacent islands related by the I1 stacking fault.For the {10 1-bar 0} inversion domain boundaries,a configuration corresponding to the Holt model was observed,as well as another with no N-N or Ga-Ga bonds.The two configurations are related by a c/2 translation.These boundaries are quite efficient in minimizing the shift along c which is introduced by substrate surface steps.

机译：GaN层包含密度（10〜10 cm〜-2）的螺纹位错，纳米管，（0001）和{11 2-bar 0}堆垛层错以及{10 1-bar 0}反转区。纯粹的边缘位错，主要位于可以稳定4个原子环核的大角度晶界内。对于{11 2-，已经观察到两个原子构型，与1/6 <10 1-bar 0>楼梯杆的位错有关。在（Ga-Al）N层中出现堆叠缺陷。在（0001）6H-SiC顶部的外延层中的台阶上会形成此类缺陷。在（0001）蓝宝石上，它们出现在与I1层错相关的两个相邻岛的合并中。对于{10 1-bar 0}反转域边界，观察到与Holt模型相对应的构型，而没有NN或Ga-Ga键。这两个构型与ac / 2平移相关。这些边界在最小化基板表面台阶所引起的沿c的偏移方面非常有效。

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《Microscopy of semiconducting materials 1999》|1999年|p.51-60|共10页
会议地点 Oxford(GB);Oxford(GB)
作者
P Ruterana; V Potin; P Vermaut; G Nouet; B Barbaray; A Botchkarev; H Morkoc;
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正文语种 eng
中图分类机械、仪表工业;
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The atomic structure of dislocations and planar boundaries in GaN

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