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Bondability of processed glass wafers

机译：加工玻璃晶圆的粘合性

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Abstract: The mechanism of direct bonding at room temperature has been attributed to the short range inter-molecular and inter-atomic attraction forces, such as Van der Waals forces. Consequently, the wafer surface smoothness becomes one of the most critical parameters in this process. High surface roughness will result in small real area of contact, and therefore yield voids in the bonding interface. Usually, the root mean square roughness (RMS) or the mean roughness (Ra) are used as parameters to evaluate the wafer bondability. It was found from experience that for a bondable wafer surface the mean roughness must be in the subnanometer range, preferentially less than 0.5 nm. When the surface roughness exceeds a critical value, the wafers will not bond at all. However RMS and Ra were found to be not sufficient for evaluating the wafer bondability. Hence one tried to relate wafer bonding to the spatial spectrum of the wafer surface profile and indeed some empirical relations that have been found. The first, who proposed a theory on the problem of the closing gaps between contacted wafers was Stengl. This gap-closing theory was then further developed by Tong and Gosele. The elastomechanics theory was used to study the balance between the decrease of surface energy due to the bonding and the increase of elastic energy due to the distortion of the wafer. They considered the worst case by assuming that both wafers have a waviness, with a wavelength $lambda and a height amplitude h, resulting in a gap height of 2h in a head to head position. This theory is simple and can be used in practice, for studying the formation of the voids, or for constructing design rules for the bonding of deliberately structured wafers. But it is insufficient to know what is the real area of contact in the wafer interface after contact at room temperature because the wafer surface always possesses a random distribution of the surface topography. Therefore Gui developed a continuous model on the influence of the surface roughness to wafer bonding, that is based on a statistical surface roughness model Pandraud demonstrated experimentally that direct bonding between processed glass wafers is possible. This result cannot be explained by considering the RMS value of the surfaces only, because the wafers used show a RMS value larger than 1 nm. Based on the approach exposed in reference six, a rigorous analysis of wafer bonding of these processed glass wafers is presented. We will discuss the relation between the bonding process and different waveguide technologies used for implementing optical waveguides into one or both glass wafers, and give examples of optical devices benefiting from such a bonding process. !13
机译：摘要：室温下直接键合的机理归因于短程的分子间和原子间吸引力，例如范德华力。因此，晶片表面光滑度成为该工艺中最关键的参数之一。高的表面粗糙度将导致较小的实际接触面积，因此会在键合界面中产生空隙。通常，均方根粗糙度（RMS）或平均粗糙度（Ra）用作评估晶片可粘合性的参数。从经验中发现，对于可粘结的晶片表面，平均粗糙度必须在亚纳米范围内，优选小于0.5nm。当表面粗糙度超过临界值时，晶片将根本不结合。然而，发现RMS和Ra不足以评估晶片的可粘合性。因此，人们试图将晶片键合与晶片表面轮廓的空间光谱以及已经发现的一些经验关系相关联。最早提出关于接触晶片之间的间隙间隙问题的理论的是Stengl。 Tong和Gosele随后进一步发展了这种缩小鸿沟的理论。弹性力学理论用于研究由于键合导致的表面能减少与由于晶片变形而引起的弹性能增加之间的平衡。他们认为最坏的情况是假设两个晶片都具有波纹，波长为λλ，高度幅度为h，导致头对头位置的间隙高度为2h。该理论很简单，可以在实践中用于研究空洞的形成，或用于构造设计规则以粘合故意构造的晶圆。但是，在室温下接触后，不知道晶片界面的实际接触面积是多少，因为晶片表面始终具有表面形貌的随机分布。因此，Gui根据表面粗糙度统计模型Pandraud建立了一个关于表面粗糙度对晶圆键合影响的连续模型，该模型基于统计的表面粗糙度模型Pandraud在实验中证明，可以在加工的玻璃晶圆之间进行直接键合。仅使用表面的RMS值无法解释该结果，因为所使用的晶圆显示的RMS值大于1 nm。基于参考文献6中公开的方法，对这些处理过的玻璃晶圆的晶圆键合进行了严格的分析。我们将讨论粘合工艺与用于将光波导实现到一个或两个玻璃晶片中的不同波导技术之间的关系，并给出受益于这种粘合工艺的光学器件示例。 ！13

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