Investigation of Se Ion Implantation for gaAs very High Speed Gate Array

机译：砷化镓超高速门阵列的离子注入研究

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Se~+-implanted GaAs substrates were performed at room temperature, we investigated the effects of incident energy, the ion dose and the incident angle. The rapid thermal annealing (RTA) temperature and the duration time as well All these parameter were optimized. Using Se~+-implantation at the dose of 1 x 10~13cm~-2, we got the n~+- type thin layers on GaAs substrates. The carrier mobility was 3010cm~2/v.s, and the impurity activity is greater than 74

机译：硒离子注入GaAs衬底在室温下进行，我们研究了入射能量，离子剂量和入射角的影响。快速热退火（RTA）温度和持续时间以及所有这些参数均已优化。通过以1 x 10〜13cm〜-2的剂量注入Se〜+，在GaAs衬底上获得了n〜+-型薄层。载流子迁移率为3010cm〜2 / v.s，杂质活度大于74

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来源
《Microwave and millimeter wave technology proceedings》|1998年|p.714-717|共4页
会议地点 Beijing(CN);Beijing(CN)
作者
zhang jianghong; song macheng; hao jingchen; lian yaguang;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation [J] . Paulter N.G., Gibbs A.J. IEEE Transactions on Electron Devices . 1988,第12期

机译：通过离子注入制备高速GaAs光电导脉冲发生器和采样门
2. Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation [J] . Wen F. Tseng, David H. Monk Materials Letters . 1999,第5期

机译：聚焦离子束注入制备的横向门控AlGaAs / InGaAs伪形高电子迁移率晶体管的亚阈值特性
3. High-speed divider using GaAs ECL/CML gate array [J] . Topham P.J., Parton J.G. Electronics Letters . 1989,第7期

机译：使用GaAs ECL / CML门阵列的高速分频器
4. Investigation of Se ion implantation for GaAs very high speed gate array [C] . Zhang Jianghong, Song Macheng . 1998

机译：GaAs超高速门阵列的Se离子注入研究
5. Characterization of floating gate implantation dose and its effect on PMOS Electrical Erasable Cell (PEEC) memory arrays. [D] . Alvarez Vega, Daniel. 2009

机译：浮栅注入剂量的表征及其对PMOS电可擦单元（PEEC）存储器阵列的影响。
6. Assessment of Embedded Conjugated Polymer Sensor Arrays for Potential Load Transmission Measurement in Orthopaedic Implants [O] . Carolina Micolini, Frederick Benjamin Holness, James A. Johnson, 2017

机译：用于骨科植入物的潜在载荷传递测量的嵌入式共轭聚合物传感器阵列的评估
7. A family of high speed digital GaAs gate arrays with an application for 432 MBit/S synchronous transmission [O] . Boganski Laurent, Froc Erwan, Fourdeux Henri 1992

机译：一系列高速数字GaAs门阵列及其在432 MBit / S同步传输中的应用
8. LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix B. Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits [R] . Zucca, R. R., Kirkpatrick, C., Asbeck, P. M., 1984

机译：LsI / VLsI（大规模集成/超大规模集成）离子注入Gaas（砷化镓）IC处理。附录B.用于集成高速逻辑电路的Gaas mEsFET器件的二维建模

Investigation of Se Ion Implantation for gaAs very High Speed Gate Array

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