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Influences on optoelectronic properties of damp heat stability of AZO and GZO for thin film solar cells

机译:薄膜太阳能电池AZO和GZO的湿热稳定性对光电性能的影响

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This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85℃ and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.
机译:这项研究调查了湿热稳定性对ZnO:Al(AZO)和ZnO:Ga(GZO)薄膜相对于薄膜太阳能电池的光电性能的影响。 AZO和GZO薄膜的最低电阻率分别为8.2621×10-4Ω-cm和2.8561×10-4Ω-cm。经过999h的湿热测试,AZO和GZO薄膜的电阻率分别增加了39.72%和11.97%。 XPS结合能分析表明,AZO薄膜具有比GZO薄膜更高的O 1s光谱。因此,膜的载流子浓度降低,因为更高的结合能归因于化学吸附的氧原子(O-)。实验结果表明,在85℃,相对湿度85%的湿热试验下进行电学,光学,结构和形态分析后,GZO膜比AZO膜更稳定。

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