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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >CHEMICALLY ENHANCED CU POLISHING WITH ABRASIVE-FREE 'MICELLE SLURRY'
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CHEMICALLY ENHANCED CU POLISHING WITH ABRASIVE-FREE 'MICELLE SLURRY'

机译：化学增强的铜抛光，无磨料的“ MICELLE SLURRY”

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摘要

CMP has played a key role in the planarization technology for the manufacture of multilevel interconnects of LSI. Recently the strong demand has come out for the development of an effective Cu CMP process particularly compatible with the low-k dielectrics. Now a new type of abrasive-free slurry is proposed to overcome such problems as the damage to the fragile low-k dielectrics due to a high polishing pressure. The new "micelle slurry" is based on a mixture of surfactant and heteropolyacid (HPA), which takes the form of surfactant micelles enveloping the Cu-reactive HPA. Its remarkable structural feature enables a predominantly chemical rather than a mechanical polishing, which results in achieving high Cu removal rates (>400 nm/min) under fairly low down forces (1.4 psi) with minimal Cu dishing (<50nm). Furthermore, the high polishing rate was provided with a non-formed pad and it was not much influenced with or without pad conditionings. The chemically enhanced micelle slurry, therefore, could not only have adaptability for Cu damascenes, particularly those incorporating low-k dielectrics, but also contribute to substantial simplification of the CMP process.
机译：CMP在制造LSI多层互连的平面化技术中起着关键作用。近来，对开发与低k电介质特别兼容的有效Cu CMP工艺的强烈需求已经出现。现在，提出了一种新型的无磨料浆液，以克服诸如由于高抛光压力而损坏易碎的低k电介质的问题。新的“胶束浆料”基于表面活性剂和杂多酸（HPA）的混合物，该混合物采取包裹Cu反应性HPA的表面活性剂胶束的形式。其卓越的结构特征使化学抛光成为可能，而不是机械抛光，从而在相当低的向下力（1.4 psi）下以最小的铜凹陷（<50nm）实现了高的铜去除率（> 400 nm / min）。此外，未形成的垫提供了高抛光速率，并且在有或没有垫调节的情况下，它没有太大的影响。因此，化学增强的胶束浆料不仅具有对铜大马士革的适应性，特别是对那些掺入低k电介质的大马士革，而且还有助于大大简化CMP工艺。

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