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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >Selective Electroplating of Copper Interconnection Layer for Liquid Crystal Display
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Selective Electroplating of Copper Interconnection Layer for Liquid Crystal Display

机译：液晶显示器铜互连层的选择性电镀

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Selective deposition of copper interconnection layer is developed with the combination of electroless-plating and electroplating processes. This process is useful for the manufacture of interconnection layer for the driver circuits employing in the LCD. Since higher resistivity copper layer, for instance, 6.4μΩ-cm, is deposited by the direct plating in the barrier layer and peeling occurs easily, this narrow interconnection layer can not be manufactured by this process. Therefore, this layer is employed as a seed layer for the electroplating copper interconnection layer. Resistivity of copper interconnection layer is above 4.3 μΩ-cm in interconnection layer deposited on electroless-plating seed layer. This is due to that high stress seed layer is deposited by electroless-plating. In order to obtain deposited low resistivity copper layer deposition and formation of low stress seed layer for the electroplating is required.
机译：铜互连层的选择性沉积是通过化学镀和电镀工艺相结合而开发的。该工艺对于制造用于LCD中的驱动器电路的互连层是有用的。由于通过直接电镀在阻挡层中沉积较高电阻率的铜层（例如6.4μΩ-cm），并且容易发生剥离，因此无法通过该工艺制造这种狭窄的互连层。因此，该层用作电镀铜互连层的种子层。在化学镀种子层上沉积的互连层中，铜互连层的电阻率高于4.3μΩ-cm。这是由于通过化学镀沉积了高应力种子层。为了获得沉积的低电阻率的铜层，需要沉积和形成用于电镀的低应力种子层。

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