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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >REACTIVE ION ETCHING OF ULTRA DEEP SUPER-VIAS IN DIELECTRIC FILMS FOR THREE DIMENSIONAL CHIP INTEGRATION
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REACTIVE ION ETCHING OF ULTRA DEEP SUPER-VIAS IN DIELECTRIC FILMS FOR THREE DIMENSIONAL CHIP INTEGRATION

机译：三维芯片集成的超薄膜中超深层反应离子刻蚀

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Three dimensional wafer scale integration which stacks multiple active silicon wafers for inter-wafer connections is becoming promising technology that can significantly improve interconnect performance. In this paper reactive ion etching of USG film to achieve ultra-deep etching of 6-micron vias is presented. Reactive ion plasma dry etching of USG has been existing for various applications including deep-submicron dual damasecne interconnect technology. In this paper, we are presenting the work performed in reactive ion etching of USG films as thick as. 60.000 A (6-micron), to form ultra deep super-vias. In this context, there was concern to obtain clean vias with required depth and acceptable profile for subsequent metal fill. Harsh post etch ashing chemistries and various post wet cleaning approaches tried-out and did not meet these requirements. Further, optimisation was successfully done within the dry etching process of USG film to obtain clean super vias with reasonable profile. It was found that, in the process of removing residues through post ashing or wet process clean-up, chemical based approach could not help to remove the residues inside the deep vias. Etching process, enhanced by physical sputtering effect could successfully remove the residues readily, as they form. The 6 micron ultra-deep super via formation was further tested for post etch metal fill by ECP for acceptable results.
机译：堆叠多个有源硅晶圆以进行晶圆间连接的三维晶圆级集成正成为有望显着提高互连性能的有希望的技术。本文介绍了USG膜的反应离子刻蚀，以实现对6微米通孔的超深腐蚀。 USG的反应离子等离子干法刻蚀已经存在于各种应用中，包括深亚微米双达马赛恩互连技术。在本文中，我们介绍了在USG膜的反应离子刻蚀中进行的工作，其厚度达到10埃。 60.000 A（6微米），形成超深超级通孔。在这种情况下，关注的是获得具有所需深度和可接受轮廓的清洁通孔，以用于随后的金属填充。苛刻的蚀刻后灰化化学方法和各种湿法后清洗方法均已试用，但不满足这些要求。此外，在USG膜的干法刻蚀过程中成功进行了优化，以获得具有合理轮廓的干净超级通孔。已经发现，在通过后灰化或湿法清理去除残留物的过程中，基于化学的方法不能帮助去除深通孔内的残留物。通过物理溅射效果增强的蚀刻过程可以成功地轻松清除残留物，因为它们形成了。通过ECP进一步测试了6微米超深超级通孔的形成，以进行蚀刻后金属填充，以获得可接受的结果。

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